SEMICONDUCTOR LIGHT EMITTING DEVICE
First Claim
Patent Images
1. A semiconductor light emitting device comprising:
- a first conductive semiconductor layer;
an active layer on the first conductive semiconductor layer; and
a second conductive semiconductor layer comprising a dual roughness structure on the active layer.
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Abstract
Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer comprising a dual roughness structure on the active layer.
16 Citations
20 Claims
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1. A semiconductor light emitting device comprising:
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a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer comprising a dual roughness structure on the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor light emitting device comprising:
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a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, wherein the second conductive semiconductor layer comprises; a first semiconductor layer comprising a shape of multiple horns; and a roughness layer ohmic contacted on the first semiconductor layer. - View Dependent Claims (11, 12, 13)
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14. A semiconductor light emitting device comprising:
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a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer comprising a dual roughness structure of a shape a multiple horns on the active layer. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification