EFFLUENT GAS RECOVERY PROCESS FOR SILICON PRODUCTION

• US 20090165647A1
• Filed: 12/31/2007
• Published: 07/02/2009
• Est. Priority Date: 12/31/2007
• Status: Abandoned Application

• Current Assignee: American Air Liquide Incorporated (L'Air Liquide SA)
• Original Assignee: American Air Liquide Incorporated (L'Air Liquide SA)
• Inventors: Gadre, Sarang
• Application Number:
  US11/967,687
• Publication Number:
  US 20090165647A1
• Time in Patent Office: Days
• US Class Current: 95/55
• CPC Class Codes: B01D 53/22 by diffusion manufacturing semi-permeable membranes B01D67/00; form, structure or properties of semi-permeable membranes B01D69/00; material for semi-permeable membranes B01D71/00
• CPC Class Codes: C01B 2203/0405 Purification by membrane separation
• CPC Class Codes: C01B 2203/0465 Composition of the impurity
• CPC Class Codes: C01B 3/501 by diffusion
• CPC Class Codes: C01B 33/10763 from silicon
• CPC Class Codes: C01B 33/10778 Purification

Abstract

Purified SiHCl3 is used as a sweep gas across a permeate side of a gas separation membrane receiving effluent gas from a polysilicon reactor. The combined sweep gas and permeate is recycled to the reactor.

Claims

1. A method for recycling effluent gas from a polysilicon production reactor, comprising the steps of:

directing an effluent gas from a polysilicon reactor to a gas separation unit comprising at least one gas separation membrane, said effluent gas comprising SiHCl₃, SiCl₄, HCl, and H₂;

directing a sweep gas comprising high purity SiHCl₃ to a permeate side of the membrane;

recovering a recycle gas from the permeate side, the recycle gas comprising H₂ permeated through the membrane from the effluent gas and SiHCl₃ from the sweep gas; and

directing the recycle gas to the polysilicon reactor.

2. The method of claim 1, further comprising the steps of:

recovering a retentate gas from the gas separation unit, the retentate gas comprising SiHCl₃, SiCl₄, HCl, and H₂;

directing the retentate gas to a SiHCl3 production process; and

obtaining purified SiHCl3 from the SiHCl3 production process, wherein the sweep gas comprises at least a portion of the obtained purified SiHCl3.

3. The method of claim 1, wherein the recycle gas is not compressed before being directed to the polysilicon reactor.

4. The method of claim 1, wherein the effluent gas is not compressed before being directed to the gas separation unit.

5. The method of claim 1, wherein at least 50% of H2 in the effluent gas permeates to the permeate side.

6. The method of claim 1, wherein at least 90% of H2 in the effluent gas permeates to the permeate side.

7. The method of claim 2, wherein said SiHCl3 production process comprises the steps of:

chilling the retentate gas to produce a first condensate and a first non-condensate, the first condensate comprising predominantly SiHCl3 and SiCl4, the first non-condensate comprising a major amount of H2 and minor amounts of SiHCl3, SiCl4, and HCl;

stripping H2 from the non-condensate;

chilling the stripped non-condensate to produce a second condensate and gaseous HCl, the second condensate comprising SiHCl3 and SiCl4;

directing the first and second condensates to a distillation unit comprising at least one distillation column; and

producing the purified SiHCl3 at the distillation unit.

8. The method of claim 7, wherein said SiHCl3 production process further comprises the steps of:

feeding Si, and the gaseous HCl to a first SiHCl3 reactor thereby producing impure SiHCl3;

purifying the impure SiHCl3 at a purification unit to produce a SiHCl3 feed;

directing the SiHCl3 feed to the distillation unit.

9. The method of claim 8, wherein said SiHCl3 production process further comprises the steps of:

feeding SiCl4 from the distillation unit and H2 to a second SiHCl3 reactor in the presence of CuCl thereby producing impure SiHCl3; and

purifying the impure SiHCl3 from the second SiHCl3 reactor at purification unit.

10. A system for recycling effluent gas from a polysilicon production reactor, comprising:

a gas separation unit comprising at least one gas separation membrane, an inlet, a permeate outlet, and a retentate outlet, the inlet being adapted and configured to fluidly communicate with an effluent gas outlet of a polysilicon reactor, the permeate outlet being adapted and configured to fluidly communicate with a reactant feed inlet of the polysilicon reactor; and

a SiHCl3 production unit adapted and configured to produce purified SiHCl3 comprising an inlet in fluid communication with the retentate outlet and an outlet in fluid communication with a permeate side of the membrane.

11. The system of claim 10, wherein the membrane has a higher permeability to H2 than SiHCl3, HCl, and SiCl4.

12. The system of claim 10, wherein there is no compressor in between the permeate outlet and the reactant feed inlet.

13. The system of claim 10, wherein there is no compressor in between the effluent gas outlet and the membrane inlet.

14. The system of claim 10, further comprising:

a first condensation unit having an inlet, a condensate outlet, and a vapor outlet, the condensation inlet being in fluid communication with the retentate outlet;

an adsorption unit adapted and configured to strip H2 from a SiCl4, SiHCl3, HCl, and H2 containing vapor from the vapor outlet of the condensation unit;

a second condensation unit having an inlet, a condensate outlet, and a vapor outlet, the second condensation unit inlet in fluid communication with the adsorption unit and being adapted and configured to condense SiCl4, HCl, and SiHCl3 from gas treated at the adsorption unit; and

a distillation unit having inlets in fluid communication with the first and second condensation unit condensate outlets and a purified SiHCl3 outlet in fluid communication with the inlet of the membrane.

15. The system of claim 14, wherein the first condensation unit comprises first and second condensers connected in series and separated by a compressor.

16. The system of claim 14, further comprising:

a first SiHCl3 reactor having reactant inlets in fluid communication with a source of Si, the adsorption unit, and the second condensation unit vapor outlet;

a purification unit having an inlet and outlet, the purification unit inlet being in fluid communication with an outlet of the first SiHCl3 reactor, the purification unit inlet being adapted and configured to receive impure SiHCl3 from the first SiHCl3 reactor, the purification unit outlet being in fluid communication with an inlet of the distillation unit.