METHODS FOR FORMING RHODIUM-BASED CHARGE TRAPS AND APPARATUS INCLUDING RHODIUM-BASED CHARGE TRAPS
First Claim
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1. A method of forming an electronic device, the method comprising:
- forming a dielectric on a substrate;
after forming the dielectric, forming conductive rhodium-based nanoparticles on the formed dielectric including forming the rhodium in the conductive rhodium-based nanoparticles with a deposition time selected to attain a predetermined retention loss property, the conductive rhodium-based nanoparticles formed by a plasma-assisted deposition process such that each conductive rhodium-based nanoparticle is isolated from the other conductive rhodium-based nanoparticles; and
after forming the conductive rhodium-based nanoparticles, forming a capping dielectric on and contacting the formed conductive rhodium-based nanoparticles, the capping dielectric contacting the dielectric such that the capping dielectric isolates the conductive rhodium-based nanoparticles from conductive elements, wherein the conductive rhodium-based nanoparticles are configured as charge traps.
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Abstract
Isolated conductive nanoparticles on a dielectric layer and methods of fabricating such isolated conductive nanoparticles provide charge traps in electronic structures for use in a wide range of electronic devices and systems. In an embodiment, conductive nanoparticles are deposited on a dielectric layer by a plasma-assisted deposition process such that each conductive nanoparticle is isolated from the other conductive nanoparticles to configure the conductive nanoparticles as charge traps.
114 Citations
40 Claims
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1. A method of forming an electronic device, the method comprising:
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forming a dielectric on a substrate; after forming the dielectric, forming conductive rhodium-based nanoparticles on the formed dielectric including forming the rhodium in the conductive rhodium-based nanoparticles with a deposition time selected to attain a predetermined retention loss property, the conductive rhodium-based nanoparticles formed by a plasma-assisted deposition process such that each conductive rhodium-based nanoparticle is isolated from the other conductive rhodium-based nanoparticles; and after forming the conductive rhodium-based nanoparticles, forming a capping dielectric on and contacting the formed conductive rhodium-based nanoparticles, the capping dielectric contacting the dielectric such that the capping dielectric isolates the conductive rhodium-based nanoparticles from conductive elements, wherein the conductive rhodium-based nanoparticles are configured as charge traps. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming an electronic device, the method comprising:
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forming a dielectric in an integrated circuit on a substrate in a reaction chamber; after forming the dielectric, subjecting the dielectric to a plasma using a non-reactive gas; introducing a rhodium-containing precursor into the reaction chamber while turning off the flow of the non-reactive gas in the reaction chamber and maintaining flow of the rhodium-containing precursor into the reaction chamber such that conductive rhodium nanoparticles are formed on the formed dielectric with each of the conductive rhodium nanoparticles isolated from the other conductive rhodium nanoparticles; and after forming the conductive rhodium nanoparticles, forming a capping dielectric on and contacting the formed conductive rhodium nanoparticles and contacting the dielectric such that the capping dielectric isolates the conductive rhodium nanoparticles from conductive elements, wherein forming the conductive rhodium nanoparticles is preformed separate from forming the dielectric and from forming the capping dielectric, wherein the conductive rhodium-based nanoparticles are configured as charge traps. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A method of forming a memory, the method comprising:
forming an array of memory cells on a substrate in a reaction chamber, each memory cell having a charge storage unit structured by; forming a high-κ
dielectric on the substrate;after forming the high-κ
dielectric, forming conductive rhodium-based nanoparticles on the formed high-κ
dielectric including forming the rhodium in the conductive rhodium-based nanoparticles with a deposition time selected to attain a predetermined retention loss property, the conductive rhodium-based nanoparticles formed by a plasma-assisted deposition process such that each conductive rhodium-based nanoparticle is isolated from the other conductive rhodium-based nanoparticles; andafter forming the conductive rhodium-based nanoparticles, forming a capping dielectric on and contacting the formed conductive rhodium-based nanoparticles and contacting the high-κ
dielectric such that the capping dielectric isolates the conductive rhodium-based nanoparticles from conductive elements, wherein the conductive rhodium-based nanoparticles are configured as charge traps.- View Dependent Claims (19, 20, 21, 22, 23)
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24. A method comprising:
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forming a dielectric stack on a substrate; after forming the dielectric stack, forming conductive rhodium-based nanoparticles on the formed dielectric stack including forming the rhodium in the conductive rhodium-based nanoparticles with a deposition time selected to attain a predetermined retention loss property, the conductive rhodium-based nanoparticles formed by a plasma-assisted deposition process such that each conductive rhodium-based nanoparticle is isolated from the other conductive rhodium-based nanoparticles; after forming the conductive rhodium-based nanoparticles, forming a capping dielectric on and contacting the formed conductive rhodium-based nanoparticles and contacting the dielectric such that the capping dielectric isolates the conductive rhodium-based nanoparticles from conductive elements, wherein the conductive rhodium-based nanoparticles are configured as charge traps; and forming a conductive element over the capping dielectric, the conductive element arranged such that the conductive element operatively controls the conductive rhodium-based nanoparticles as charge storage elements. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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31. An electronic apparatus comprising:
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a dielectric on a substrate; conductive rhodium-based nanoparticles on the dielectric such that each conductive rhodium-based nanoparticle is isolated from the other conductive rhodium-based nanoparticles, the conductive rhodium-based nanoparticles configured as charge traps having a selected retention loss property; a capping dielectric on and contacting the conductive rhodium-based nanoparticles and contacting the conductive rhodium-based nanoparticles; and a conductive element over the capping dielectric, the conductive element arranged such that the conductive element operatively controls the conductive rhodium-based nanoparticles as charge storage elements. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40)
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Specification