RADIO FREQUENCY SWITCH CIRCUIT

• US 20090181630A1
• Filed: 01/15/2009
• Published: 07/16/2009
• Est. Priority Date: 01/15/2008
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Seshita, Toshiki, Sagae, Yoshitomo
• Application Number:
  US12/354,185
• Publication Number:
  US 20090181630A1
• Time in Patent Office: Days
• US Class Current: 455/191.300
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00
• CPC Class Codes: H04B 1/006 using switches for selecting the desired band H04B1/0057 takes precedence
• CPC Class Codes: H04B 1/48 in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter H04B1/46 takes precedence

Abstract

A radio frequency switch circuit includes: an antenna terminal; a first and second RF terminal; a first through transistor placed between the antenna terminal and the first RF terminal; a second through transistor placed between the antenna terminal and the second RF terminal; a first shunt transistor placed between ground and the first RF terminal; a second shunt transistor placed between the ground and the second RF terminal; and a distortion compensation circuit including a reverse parallel connected MOS capacitor whose capacitance around 0 volts has voltage dependence that is convex to the minus direction, the distortion compensation circuit being operable to compensate for voltage dependence of off-capacitance around 0 volts of the first and second through transistor and the first and second shunt transistor that is convex to the plus direction. Electrical connection between the antenna terminal and the first and second RF terminal is switchable.

Claims

1. A radio frequency switch circuit comprising:

an antenna terminal;

a first and second RF terminal;

a first through transistor placed between the antenna terminal and the first RF terminal;

a second through transistor placed between the antenna terminal and the second RF terminal;

a first shunt transistor placed between ground and the first RF terminal;

a second shunt transistor placed between the ground and the second RF terminal; and

a distortion compensation circuit including a reverse parallel connected MOS capacitor whose capacitance around 0 volts has voltage dependence that is convex to the minus direction, the distortion compensation circuit being operable to compensate for voltage dependence of off-capacitance around 0 volts of the first and second through transistor and the first and second shunt transistor that is convex to the plus direction,

electrical connection between the antenna terminal and the first and second RF terminal being switchable.

2. The switch circuit according to claim 1, further comprising:

a third RF terminal;

a third through transistor placed between the antenna terminal and the third RF terminal; and

a third shunt transistor placed between the ground and the third RF terminal,

wherein the radio frequency switch circuit can be used in a multi-band wireless system.

3. The switch circuit according to claim 2, wherein the multi-band wireless system includes at least one of Global System for Mobile Communications (GSM) and Universal Mobile Telecommunications System (UMTS).

4. A radio frequency switch circuit comprising:

an antenna terminal;

a first and second RF terminal;

a first through transistor placed between the antenna terminal and the first RF terminal;

a second through transistor placed between the antenna terminal and the second RF terminal;

a first shunt transistor placed between ground and the first RF terminal;

a second shunt transistor placed between the ground and the second RF terminal; and

a distortion compensation circuit including a reverse parallel connected MOS capacitor and placed at least one of between the antenna terminal and the ground and between the ground and one of the first and second RF terminal,

electrical connection between the antenna terminal and the first and second RF terminal being switchable.

5. The switch circuit according to claim 4, wherein the MOS capacitor includes a first capacitor made of a MOSFET having a first threshold voltage and a second capacitor made of a MOSFET having a second threshold voltage, the first and second capacitor being parallel connected.

6. The switch circuit according to claim 4, wherein

the capacitance of the MOS capacitor has nonlinear voltage dependence that is convex to the minus direction around 0 volts, and

the distortion compensation circuit compensates for nonlinear voltage dependence of off-capacitance of the first and second through transistor and the first and second shunt transistor that is convex to the plus direction around 0 volts.

7. The switch circuit according to claim 4, wherein the distortion compensation circuit includes at least two series connected instances of a parallel circuit made of the MOS capacitor and a resistance.

8. The switch circuit according to claim 4, wherein the antenna terminal and the first RF terminal are electrically connected by turning on the first through transistor, turning off the second through transistor, turning off the first shunt transistor, and turning on the second shunt transistor.

9. The switch circuit according to claim 4, wherein

the first and second through transistor and the first and second shunt transistor are MOSFETs formed on a silicon-on-insulator, and

the MOS capacitor is formed on the silicon-on-insulator.

10. The switch circuit according to claim 9, wherein

the MOS capacitor is made of a MOSFET including a source region of a first conductivity type, a drain region of the first conductivity type, an extraction region of a second conductivity type, a body region of the second conductivity type, a gate dielectric film provided on the body region, and a gate electrode provided on the gate dielectric film, and

the source region and the extraction region are juxtaposed across the body region in a direction that crosses a direction in which the source region and the drain region are juxtaposed across the body region.

11. The switch circuit according to claim 9, wherein the MOS capacitor includes a first region of a first conductivity type, an extraction region of a second conductivity type, a body region of the second conductivity type provided between the first region and the extraction region, a dielectric film provided on the body region, and an electrode provided on the dielectric film.

12. The switch circuit according to claim 11, wherein the body region constituting the MOS capacitor is made of two regions having different carrier concentrations.

13. A radio frequency switch circuit comprising:

an antenna terminal;

a first and second RF terminal;

a first through transistor placed between the antenna terminal and the first RF terminal;

a second through transistor placed between the antenna terminal and the second RF terminal;

a first shunt transistor placed between ground and the first RF terminal;

a second shunt transistor placed between the ground and the second RF terminal; and

a distortion compensation circuit including a reverse parallel connected MOS capacitor,

at least one of the first through transistor, the second through transistor, the first shunt transistor, and the second shunt transistor being connected parallel to the distortion compensation circuit, and

electrical connection between the antenna terminal and the first and second RF terminal being switchable.

14. The switch circuit according to claim 13, wherein at least one of the first through transistor, the second through transistor, the first shunt transistor, and the second shunt transistor includes at least two series connected transistors that are connected parallel to the distortion compensation circuit.

15. The switch circuit according to claim 13, wherein the MOS capacitor includes a first capacitor made of a MOSFET having a first threshold voltage and a second capacitor made of a MOSFET having a second threshold voltage, the first and second capacitor being parallel connected.

16. The switch circuit according to claim 13, wherein

the capacitance of the MOS capacitor has nonlinear voltage dependence that is convex to the minus direction around 0 volts, and

the distortion compensation circuit compensates for nonlinear voltage dependence of off-capacitance of the first and second through transistor and the first and second shunt transistor that is convex to the plus direction around 0 volts.

17. The switch circuit according to claim 13, wherein the distortion compensation circuit includes at least two series connected instances of a parallel circuit made of the MOS capacitor and a resistance.

18. The switch circuit according to claim 13, wherein the antenna terminal and the first RF terminal are electrically connected by turning on the first through transistor, turning off the second through transistor, turning off the first shunt transistor, and turning on the second shunt transistor.

19. The switch circuit according to claim 13, wherein

the first and second through transistor and the first and second shunt transistor are MOSFETs formed on a silicon-on-insulator, and

the MOS capacitor is formed on the silicon-on-insulator.

20. The switch circuit according to claim 19, wherein the MOS capacitor includes a first region of a first conductivity type, an extraction region of a second conductivity type, a body region of the second conductivity type provided between the first region and the extraction region, a dielectric film provided on the body region, and an electrode provided on the dielectric film.