SEMICONDUCTOR DEVICE

• US 20090189260A1
• Filed: 03/25/2009
• Published: 07/30/2009
• Est. Priority Date: 12/28/2000
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Hitachi Hokkai Semiconductor, Ltd. (Renesas Electronics Corporation), Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: DANNO, Tadatoshi, HASEBE, Hajime, SATOU, Yukihiro
• Granted Patent: US 7,911,054 B2
• Time in Patent Office: Days
• US Class Current: 257/667
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/26175 Flow barriers
• CPC Class Codes: H01L 2224/27013 for holding or confining the layer connector, e.g. solder flow barrier
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32057 in side view
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/32257 the layer connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48095 Kinked
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48253 connecting the wire to a potential ring of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/484 Connecting portions
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/48599 Principal constituent of the connecting portion of the wire connector being Gold (Au)
• CPC Class Codes: H01L 2224/48639 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49433 : outside the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/83051 : Forming additional members, e.g. dam structures
• CPC Class Codes: H01L 2224/83101 : as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/83385 : Shape, e.g. interlocking features
• CPC Class Codes: H01L 2224/85 : using a wire connector
• CPC Class Codes: H01L 2224/85439 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/92 : Specific sequence of method steps
• CPC Class Codes: H01L 2224/92247 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/3121 : a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/49 : wire-like arrangements or pins or rods using optical fibres H01L23/48; pins attached to insulating substrates H01L23/49811
• CPC Class Codes: H01L 23/49503 : characterised by the die pad
• CPC Class Codes: H01L 23/4952 : the additional leads being a bump or a wire
• CPC Class Codes: H01L 23/49548 : Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01067 : Holmium [Ho]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/15151 : the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18301 : being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: Y10T 29/49121 : Beam lead frame or beam lead device

Abstract

In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.

Claims

1. A semiconductor device comprising:

a seal member formed of an insulating resin;

a tab whose back side is exposed to a mounting surface of the seal member, the tab having, on a surface thereof opposite to the back side, a semiconductor element fixing area and wire connection areas;

tub suspension leads contiguous to the tab;

a plurality of leads disposed around and apart from the tab, whose back sides are exposed to the mounting surface of the seal member;

a semiconductor chip positioned within the seal member and fixed through an adhesive onto the semiconductor chip fixing area in such a manner that a back side of the semiconductor chip is opposed to the semiconductor chip fixing area, the semiconductor chip has electrodes formed on a main surface of the semiconductor chip;

electrically conductive wires for electrically connecting the plural electrodes of the semiconductor chip and surfaces of the leads and electrically connecting the electrodes on the semiconductor chip and the wire connection areas on the tab,

wherein the tab is formed larger than the semiconductor chip so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor chip; and

wherein a groove is formed in the surface of the tab so as to be positioned between the semiconductor chip fixing area and the wire connection areas.

2. A semiconductor device according to claim 1, wherein the groove surrounds a whole circumference of the semiconductor chip fixing area.

3. A semiconductor device according to claim 1, wherein the adhesive is not applied to the wire connection areas on the tab.

4. A semiconductor device according to claim 1, wherein a plating film is formed selectively on the wire connection areas of the tab and the surfaces of the leads, and the wires are connected onto the plating film.

5. A semiconductor device according to claim 1, wherein a first plating film is formed selectively on the surfaces of the leads, and first wires of the wires are connected onto the first plating film, and

wherein a second plating film is formed on the wire connection areas, and second wires of the wires are connected onto the second plating film.

6. A semiconductor device according to claim 1, wherein an area of the surface of the tab is larger than that of the back side of the tab.

7. A semiconductor device according to claim 6, wherein the tab has a section which is in the shape of an inverted trapezoid.

8. A semiconductor device according to claim 1, wherein the adhesive is applied also to the interior of the groove and the semiconductor chip is larger than the semiconductor chip fixing area and is fixed also onto the groove through the adhesive.

9. A semiconductor device according to claim 1, wherein the groove is selectively formed correspondingly to areas where the wires are connected.

10. A semiconductor device according to claim 1, wherein the tab is quadrangular and the groove is formed selectively in a mutually independent manner without being formed at four corners of the tab.

11. A semiconductor device according to claim 1, wherein the tab is quadrangular and the groove is formed selectively in a mutually independent manner along sides of the quadrangle.

12. A semiconductor device according to claim 1, wherein grooves are formed in the surfaces of the leads respectively and the wires are connected at positions closer to the semiconductor chip with respect to the grooves formed in the surfaces of the leads.

13. A semiconductor device according to claim 1, wherein the grooves are formed by pressing work.