Structure for Making a Top-side Contact to a Substrate
6 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor structure includes a starting semiconductor substrate having a recessed portion. A semiconductor material is formed in the recessed portion and has a higher resistivity than the starting semiconductor substrate. A body region extends in the semiconductor material, and has a conductivity type opposite that of the semiconductor material. Source regions extend in the body region, and have a conductivity type opposite that of the body region. A gate electrode extends adjacent to but is insulated from the body region. A first interconnect layer extends over and is in contact with a non-recessed portion of the starting semiconductor substrate. The first interconnect layer and the non-recessed portion provide a top-side electrical contact to portions of the starting semiconductor substrate underlying the semiconductor material.
15 Citations
63 Claims
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1-48. -48. (canceled)
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49. A semiconductor structure comprising:
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a starting semiconductor substrate having a recessed portion; a semiconductor material in the recessed portion, the semiconductor material having a higher resistivity than the starting semiconductor substrate; a body region extending in the semiconductor material, the body region and the semiconductor material being of opposite conductivity type; source regions in the body region, the source and body regions being of opposite conductivity type; a gate electrode extending adjacent to but being insulated from the body region; and a first interconnect layer extending over and in contact with a non-recessed portion of the starting semiconductor substrate, the first interconnect layer and the non-recessed portion providing a top-side electrical contact to portions of the starting semiconductor substrate underlying the semiconductor material. - View Dependent Claims (50, 51, 52, 53, 54, 55)
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56. A semiconductor structure, comprising:
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a starting semiconductor substrate having a recessed portion; a semiconductor material in the recessed portion, the semiconductor material having a higher resistivity than the starting semiconductor substrate; a dielectric spacer vertically extending between the semiconductor material and a non-recessed portion of the starting semiconductor substrate; a body region extending in the semiconductor material, the body region and the semiconductor material being of opposite conductivity type; source regions in the body region, the source and body regions being of opposite conductivity type; a gate electrode extending adjacent to but being insulated from the body region; and a first interconnect layer extending over and in contact with the non-recessed portion of the starting semiconductor substrate, the first interconnect layer and the non-recessed portion providing a top-side electrical contact to portions of the starting semiconductor substrate underlying the semiconductor material. - View Dependent Claims (57, 58, 59, 60, 61, 62, 63)
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Specification