Semiconductor Device Structures and Related Processes

  • US 20090206924A1
  • Filed: 02/10/2009
  • Published: 08/20/2009
  • Est. Priority Date: 02/14/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device structure, comprising:

  • a gate which is positioned in a first trench, and capacitively coupled to control vertical conduction from a first-conductivity-type source through semiconductor material which is adjacent to said trench;

    recessed field plates, positioned in proximity to and capacitively coupled to said semiconductor material;

    said recessed field plates being positioned in respective second trenches; and

    diffusions of a second conductivity type lying at least partially beneath said respective second trenches.

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