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Ultrathin integrated circuit and method of manufacturing an ultrathin integrated circuit

  • US 20090212397A1
  • Filed: 02/18/2009
  • Published: 08/27/2009
  • Est. Priority Date: 02/22/2008
  • Status: Abandoned Application
First Claim
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1. A method of manufacturing an integrated circuit, the method comprising:

  • providing a substrate having a front side, a back side, and an edge extending from the front side to the back side;

    creating a defect layer in the substrate, the defect layer having at least one edge which does not intersect the edge of the substrate;

    defining a semiconductor device proximate the front side after creating the defect layer; and

    cleaving proximate the defect layer after defining the semiconductor device.

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