Ultrathin integrated circuit and method of manufacturing an ultrathin integrated circuit
First Claim
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1. A method of manufacturing an integrated circuit, the method comprising:
- providing a substrate having a front side, a back side, and an edge extending from the front side to the back side;
creating a defect layer in the substrate, the defect layer having at least one edge which does not intersect the edge of the substrate;
defining a semiconductor device proximate the front side after creating the defect layer; and
cleaving proximate the defect layer after defining the semiconductor device.
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Abstract
A method of manufacturing an ultra thin integrated circuit comprises providing a substrate having a front side, a back side, and an edge extending from the front side to the back side; creating a defect layer in the substrate; forming semiconductor devices proximate the front side after creating the defect layer; and cleaving proximate the defect layer after forming the semiconductor devices. Other methods and apparatus are also provided.
66 Citations
29 Claims
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1. A method of manufacturing an integrated circuit, the method comprising:
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providing a substrate having a front side, a back side, and an edge extending from the front side to the back side; creating a defect layer in the substrate, the defect layer having at least one edge which does not intersect the edge of the substrate; defining a semiconductor device proximate the front side after creating the defect layer; and cleaving proximate the defect layer after defining the semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of manufacturing an integrated circuit, the method comprising:
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providing a substrate having a front side, a back side, and an edge extending from the front side to the back side; creating a first defect layer in the substrate, the first defect layer having at least one edge which does not intersect the edge of the substrate; defining a semiconductor device proximate the front side after creating the defect layer; creating a second defect layer in the substrate, the second defect layer being substantially in the same plane as the first defect layer, and having at least one edge intersecting the edge of the substrate, and; cleaving proximate the second defect layer, after creating the second defect layer.
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24. An integrated circuit formed from a method comprising:
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providing a substrate having a front side, a back side, and an edge extending from the front side to the back side; creating a defect layer in the substrate, the defect layer having at least one edge which does not intersect the edge of the substrate; generating microcracks relative to the edge, proximate the defect layer, using an abrasion tool; and cleaving proximate the defect layer after generating the microcracks. - View Dependent Claims (25, 26, 27, 28)
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29. A method comprising:
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providing a substrate having a front side and a back side, and an edge extending from the front side to the back side; implanting an ion to create a defect layer in the substrate, the defect layer having at least one edge which does not intersect the edge of the substrate; forming active MOS devices in the substrate including devices to define an integrated circuit; forming through-substrate vias from the front side; depositing insulators in the vias; depositing conductors in the vias; removing excess conductor and insulator from the front side; covering the metal with a passivation layer; patterning bond pad openings and electrolessly forming Ni/Au bumps electrically coupled to MOS devices; at least partially encapsulating the front side; abrading the edge with an abrasive knife edge at the defect layer and performing cleaving to provide a new backside surface; smoothing the new back side surface and making the vias flush with the new back side surface; forming an electrically insulating coating on the smoothed surface; providing openings in the insulating coating to allow contact to the through-substrate vias.
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Specification