Wide bandgap transistor devices with field plates

• US 20090224288A1
• Filed: 01/21/2009
• Published: 09/10/2009
• Est. Priority Date: 09/09/2003
• Status: Active Grant

• Current Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: Parikh, Primit, Wu, Yifeng
• Granted Patent: US 8,120,064 B2
• Time in Patent Office: Days
• US Class Current: 257/194
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/42316 for field-effect transistors
• CPC Class Codes: H01L 29/7787 with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
• CPC Class Codes: H01L 29/812 with a Schottky gate H01L29/7725, H01L29/775, H01L29/778, H01L29/806 take precedence; with Schottky contact on top of heterojunction gate H01L29/802

Abstract

A transistor structure comprising an active semiconductor layer with metal source and drain contacts formed in electrical contact with the active layer. A gate contact is formed between the source and drain contacts for modulating electric fields within the active layer. A spacer layer is formed above the active layer and a conductive field plate formed above the spacer layer, extending a distance L_f from the edge of the gate contact toward the drain contact. The field plate is electrically connected to the gate contact and provides a reduction in the peak operational electric field.

Claims

1. A transistor, comprising:

a plurality of active semiconductor layers on a substrate;

a source contact in electrical contact with said plurality of active layers;

a drain contact also in electrical contact with said plurality of active layers with space between said source and drain contacts on the topmost of said plurality of active layers;

a gate in electrical contact with said topmost of said plurality of active layers, between said source and drain contacts;

a spacer layer covering said gate and substantially all of the surface of the topmost of said plurality of active layers, between said gate and said source and drain contacts; and

a field plate formed on said spacer layer and electrically connected to said gate by one or more conductive paths running outside said plurality of active layers.

2. The transistor of claim 1, wherein said field plate extends on said spacer layer a distance L_f from the edge of said gate toward said drain contact.

3. The transistor of claim 1, comprising a high electron mobility transistor (HEMT) and wherein said plurality of active layers comprises at least a buffer layer on said substrate and a barrier layer on said buffer layer with a two dimensional electron gas between said buffer and barrier layer, said barrier layer being the topmost of said plurality of active layers.

4. The transistor of claim 1, wherein said active semiconductor layers are gallium nitride based.

5. The transistor of claim 3, further comprising a nucleation layer between said buffer layer and said substrate.

6. The transistor of claim 1, comprising a silicon carbide based metal semiconductor field effect transistor (MESFET) wherein said plurality of active layers comprises at least a buffer layer on said substrate and a channel layer on said buffer layer, said channel layer being the topmost of said plurality of active layers.

7. The transistor of claim 1, wherein said gate is gamma shaped.

8. The transistor of claim 1, wherein said field plate provides a reduction in the peak operational electric field compared to a transistor having a similar structure without said field plate.

9. The transistor of claim 1, wherein said gate is at least partially recessed in said topmost of said plurality of active layers.

10. The transistor of claim 1, further comprising a passivation layer covering at least some of the exposed surfaces of said transistor.

11. The transistor of claim 1, further comprising a second spacer layer covering said field plate and the surface of said spacer layer between said field plate and drain contact, and further comprising a second field plate on said second spacer layer and extending from the edge of said gate toward said drain contact.

12. The transistor of claim 1, further comprising at least one additional spacer layer and field plate pair over said spacer layer and field plate.

13. A transistor, comprising:

a plurality of Group-III nitride active semiconductor layers;

a source contact in electrical contact with said plurality of active layers;

a drain contact in electrical contact with said plurality of active layers with space between said source and drain contacts on said plurality of active layers;

a gate contact in electrical contact with said topmost of said plurality of active layers, between said source and drain contacts;

a spacer layer covering at least one of said contacts; and

a field plate on said spacer layer and electrically connected to at least one of said contacts by one or more conductive paths running outside said plurality of active semiconductor layers.

14. The transistor of claim 13, wherein said field plate at least partially overlaps said gate and extends on said spacer layer toward said drain contact.

15. The transistor of claim 13, wherein each of said paths runs outside of said spacer layer.

16. The transistor of claim 13, wherein said field plate is on a spacer layer step arrangement, said field plate comprising a plurality of field plate portions, each of which has a different distance between it and the topmost of said plurality of active layers.

17. The transistor of claim 13, comprising a high electron mobility transistor (HEMT) and wherein said plurality of active layers comprises at least a buffer layer on said substrate and a barrier layer on said buffer layer with a two dimensional electron gas between said buffer and barrier layer, said barrier layer being the topmost of said plurality of active layers.

18. The transistor of claim 13, wherein said active semiconductor layers are gallium nitride based.

19. The transistor of claim 17, further comprising a nucleation layer between said buffer layer and said substrate.

20. The transistor of claim 13, comprising a silicon carbide based metal semiconductor field effect transistor (MESFET) wherein said plurality of active layers comprises at least a buffer layer on said substrate and a channel layer on said buffer layer, said channel layer being the topmost of said plurality of active layers.

21. The transistor of claim 13, wherein said gate is gamma shaped.

22. The transistor of claim 13, wherein said field plate provides a reduction in the peak operational electric field compared to a transistor having a similar structure without said field plate.

23. The transistor of claim 13, wherein said gate is at least partially recessed in said topmost of said plurality of active layers.

24. The transistor of claim 13, further comprising a passivation layer covering at least some of the exposed surfaces of said transistor.

25. A transistor, comprising:

a plurality of active semiconductor layers on a substrate;

a source contact in electrical contact with said plurality of active layers;

a drain contact also in electrical contact with said plurality of active layers with space between said source and drain contacts on the topmost of said plurality of active layers;

a gate in electrical contact with said topmost of said plurality of active layers, between said source and drain contacts;

a spacer layer on and covering substantially all of the surface of the topmost of said plurality of active layers, between said gate and said source and drain contacts, wherein said gate is not covered by said spacer layer; and

a field plate on said spacer layer integral to said gate, wherein said field plate at least partially overlaps said gate and extends on said spacer layer a distance Lf toward said drain contact.