SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

• US 20090230404A1
• Filed: 10/26/2006
• Published: 09/17/2009
• Est. Priority Date: 04/28/2006
• Status: Active Grant

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Matsukawa, Shinji, Masuda, Takeyoshi
• Granted Patent: US 8,283,674 B2
• Time in Patent Office: Days
• US Class Current: 257/77
• CPC Class Codes: C23C 16/325 Silicon carbide
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/0243 Surface structure
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/02634 Homoepitaxy
• CPC Class Codes: H01L 21/046 using ion implantation
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/1037 and non-planar channel resulting from the gate electrode disposition, e.g. within a trench, H01L29/42356
• CPC Class Codes: H01L 29/66068 the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence

Abstract

MOSFET (30) is provided with SiC film (11). SiC film (11) has a facet on its surface, and the length of one period of the facet is 100 nm or more, and the facet is used as channel (16). Further, a manufacturing method of MOSFET (30) includes: a step of forming SiC film (11); a heat treatment step of heat-treating SiC film (11) in a state where Si is supplied on the surface of SiC film (11); and a step of forming the facet obtained on the surface of SiC film (11) by the heat treatment step into a channel (16). Thereby, it is possible to sufficiently improve the characteristics.

Claims

1. A semiconductor device comprising

a semiconductor film made of silicon carbide,

wherein the semiconductor film has a facet on its surface, and

wherein the facet is used as a channel.

2. The semiconductor device according to claim 1, wherein at least one of the facets is constituted by {0001} face.

3. The semiconductor device according to claim 1, wherein the semiconductor film has a 4H-type crystal structure, and at least one of the facets is constituted by {03-38} face.

4. The semiconductor device according to claim 1, wherein the semiconductor film has a 6H-type crystal structure, and at least one of the facets is constituted by {01-14} face.

5. The semiconductor device according to claim 1, wherein the channel is included in a surface constituting the facet.

6. The semiconductor device according to claim 1, wherein the semiconductor film further includes grooves on its surface, and the facet is formed adjacently to the groove.

7. A manufacturing method of a semiconductor device comprising:

a step of forming a semiconductor film made of silicon carbide;

a heat treatment step of heat-treating the semiconductor film in a sate where silicon is supplied on the surface of the semiconductor film; and

a channel forming step of forming a facet obtained on the surface of the semiconductor film by the heat treatment step into a channel.

8. The manufacturing method of the semiconductor device according to claim 7, further comprising a step of flattening the surface of the semiconductor film before the heat treatment step.

9. The manufacturing method of the semiconductor device according to claim 7, further comprising

a step of forming grooves on the surface of the semiconductor film before the heat treatment step,

wherein the facet is formed adjacently to the groove in the heat treatment step.

10. The manufacturing method of the semiconductor device according to claim 7, wherein the heat treatment step includes a film coating step of forming a coating film made of silicon as a main constituent element on the surface of the semiconductor film.

11. The manufacturing method of the semiconductor device according to claim 10, wherein the channel forming step includes a step of oxidizing the coating film.

12. The manufacturing method of the semiconductor device according to claim 7, further comprising:

a step of implanting impurities into the semiconductor film; and

an activating step of activating the impurities,

wherein the heat treatment step and the activating step are performed at one and the same step.