FINGER CAPACITOR STRUCTURES

• US 20090230509A1
• Filed: 11/20/2008
• Published: 09/17/2009
• Est. Priority Date: 03/12/2008
• Status: Abandoned Application

• Current Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Original Assignee: Broadcom Corporation (Broadcom, Inc.)
• Inventors: MacIntosh, Malcolm, Behzad, Arya Reza
• Application Number:
  US12/275,074
• Publication Number:
  US 20090230509A1
• Time in Patent Office: Days
• US Class Current: 257/532
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A capacitive structure formed in an Integrated Circuit (IC) includes a plurality of capacitor node conductor pairs, each including a first node conductor having a base portion and a plurality of finger portions and a second node conductor having a base portion and a plurality of finger portions that are inter digitized with the plurality of finger portions of the first node conductor. Dielectric is horizontally disposed between the first node conductor and the second node conductor. At least one dielectric layer vertically separates adjacent metal layers, each dielectric layer including dielectric disposed between the adjacent metal layers, a plurality of first node vias vertically connecting finger portions of first node conductors of the adjacent metal layers, and a plurality of second node vias vertically connecting finger portions of the second node conductors of the adjacent metal layers. The plurality of first node vias and plurality of second node vias have staggered spacing to preclude laterally adjacent first node vias and second node vias.

Claims

1. An Integrated Circuit (IC) finger capacitor structure comprising:

a plurality of capacitor node conductor pairs, each of a respective metal layer and each comprising;

a first node conductor having a base portion and a plurality of finger portions;

a second node conductor having a base portion and a plurality of finger portions that are inter digitized with the plurality of finger portions of the first node conductor; and

dielectric horizontally disposed between the first node conductor and the second node conductor;

at least one dielectric layer vertically separating adjacent metal layers, each dielectric layer comprising

dielectric disposed between the adjacent metal layers; and

a plurality of first node vias vertically connecting finger portions of first node conductors of the adjacent metal layers; and

a plurality of second node vias vertically connecting finger portions of the second node conductors of the adjacent metal layers, the plurality of first node vias and plurality of second node vias having staggered spacing to preclude laterally adjacent first node vias and second node vias.

2. The finger capacitor structure of claim 1, wherein:

the plurality of finger portions of the first node conductor each have a finger thickness, a finger width, and a finger length;

the plurality of first node vias each have a via thickness, a via width, and a via length; and

for at least some first node vias, the via length greater than the finger width.

3. The finger capacitor structure of claim 1, wherein:

the plurality of finger portions of the first node conductor each have a finger thickness, a finger width, and a finger length;

the plurality of first node vias each have a via thickness, a via width, and a via length; and

for at least some first node vias, the via length greater substantially equal to the finger width.

4. The finger capacitor structure of claim 1, wherein:

the plurality of metal layers comprise two metal layers; and

the at least one dielectric layer comprises a single dielectric layer.

5. The finger capacitor structure of claim 1, wherein:

the plurality of metal layers comprise at least three metal layers; and

the at least one dielectric layer comprises at least two dielectric layers.

6. The finger capacitor structure of claim 1, further comprising:

a semi conductive layer including;

a first node conductor;

a second node conductor; and

dielectric horizontally disposed between the first node conductor and the second node conductor; and

a dielectric layer vertically separating the semi conductive layer and an adjacent metal layer, the dielectric layer including;

dielectric disposed between the semi conductive layer and the adjacent metal layer; and

a plurality of first node vias vertically connecting the first node conductor of the semi conductive layer to a first node conductor of the adjacent metal layer; and

a plurality of second node vias vertically connecting the second node conductor of the semi conductive layer to a second node conductor of the adjacent metal layer.

7. An Integrated Circuit (IC) comprising:

communication circuitry; and

a capacitor coupled to the communication circuitry and including;

a plurality of capacitor node conductor pairs, each of a respective metal layer and each comprising;

a first node conductor having a base portion and a plurality of finger portions;

a second node conductor having a base portion and a plurality of finger portions that are inter digitized with the plurality of finger portions of the first node conductor; and

dielectric horizontally disposed between the first node conductor and the second node conductor;

at least one dielectric layer vertically separating adjacent metal layers, each dielectric layer comprising

dielectric disposed between the adjacent metal layers; and

a plurality of first node vias vertically connecting finger portions of first node conductors of the adjacent metal layers; and

a plurality of second node vias vertically connecting finger portions of the second node conductors of the adjacent metal layers, the plurality of first node vias and plurality of second node vias having staggered spacing to preclude laterally adjacent first node vias and second node vias.

8. The integrated circuit of claim 7, wherein:

the plurality of finger portions of the first node conductor each have a finger thickness, a finger width, and a finger length;

the plurality of first node vias each have a via thickness, a via width, and a via length; and

for at least some first node vias, the via length greater than the finger width.

9. The integrated circuit of claim 7, wherein:

the plurality of finger portions of the first node conductor each have a finger thickness, a finger width, and a finger length;

the plurality of first node vias each have a via thickness, a via width, and a via length; and

for at least some first node vias, the via length greater substantially equal to the finger width.

10. The integrated circuit of claim 7, wherein:

the plurality of metal layers comprise two metal layers; and

the at least one dielectric layer comprises a single dielectric layer.

11. The integrated circuit of claim 7, wherein:

the plurality of metal layers comprise at least three metal layers; and

the at least one dielectric layer comprises at least two dielectric layers.

12. The integrated circuit of claim 7, further comprising:

a semi conductive layer disposed adjacent to a dielectric layer of the integrated circuit and including;

a first node conductor;

a second node conductor; and

dielectric horizontally disposed between the first node conductor and the second node conductor; and

a dielectric layer vertically separating the semi conductive layer and an adjacent metal layer, the dielectric layer including;

dielectric disposed between the semi conductive layer and the adjacent metal layer; and

a plurality of first node vias vertically connecting the first node conductor of the semi conductive layer to a first node conductor of the adjacent metal layer; and

a plurality of second node vias vertically connecting the second node conductor of the semi conductive layer to a second node conductor of the adjacent metal layer.