Integrated Circuitry
7 Assignments
0 Petitions
Accused Products
Abstract
Some embodiments include formation of at least one cavity in a first semiconductor material, followed by epitaxially growing a second semiconductor material over the first semiconductor material and bridging across the at least one cavity. The cavity may be left open, or material may be provided within the cavity. The material provided within the cavity may be suitable for forming, for example, one or more of electromagnetic radiation interaction components, transistor gates, insulative structures, and coolant structures. Some embodiments include one or more of transistor devices, electromagnetic radiation interaction components, transistor devices, coolant structures, insulative structures and gas reservoirs.
120 Citations
83 Claims
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1-50. -50. (canceled)
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51. Integrated circuitry, comprising:
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a monocrystalline semiconductor material having conduits extending therein; one or more devices over the semiconductor material; and coolant within the conduits, the coolant being liquid or gel. - View Dependent Claims (52, 53, 55, 57)
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54. (canceled)
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56. (canceled)
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58-67. -67. (canceled)
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68. Integrated circuitry, comprising:
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a monocrystalline semiconductor material having one or more openings contained therein; a transistor gate over the monocrystalline semiconductor material; a pair of conductively-doped source/drain regions within the monocrystalline semiconductor material and proximate the transistor gate;
the source/drain regions being spaced from one another by a channel region within the monocrystalline semiconductor material directly beneath the transistor gate; andwherein the one or more openings are directly beneath at least one of the channel region and the source/drain regions. - View Dependent Claims (69, 70, 71, 72, 73, 74)
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75. Integrated circuitry, comprising:
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a monocrystalline semiconductor material having an opening contained therein, and having a trough directly over the opening; a transistor gate extending into the trough; and a pair of conductively-doped source/drain regions within the monocrystalline semiconductor material and proximate the transistor gate;
the source/drain regions being spaced from one another by a channel region within the monocrystalline semiconductor material between the transistor gate and the opening. - View Dependent Claims (76, 77)
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78. Integrated circuitry, comprising:
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a monocrystalline semiconductor material having an opening contained therein; dielectric material lining the opening; electrically conductive material within the lined opening; and a pair of conductively-doped source/drain regions within the monocrystalline semiconductor material and proximate the conductive material;
the source/drain regions being spaced from one another by a channel region within the monocrystalline semiconductor material;
the conductive material gatedly connecting the source/drain regions to one another through the channel region. - View Dependent Claims (79, 80, 81, 82)
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83-91. -91. (canceled)
Specification