SEMICONDUCTOR DEVICE AND PEELING OFF METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• US 20090239320A1
• Filed: 04/30/2009
• Published: 09/24/2009
• Est. Priority Date: 07/16/2001
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: MARUYAMA, Junya, MIZUKAMI, Mayumi, YAMAZAKI, Shunpei, TAKAYAMA, Toru
• Granted Patent: US 8,367,440 B2
• Time in Patent Office: Days
• US Class Current: 438/27
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/1341 Filling or closing of cells
• CPC Class Codes: G02F 1/13613 the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 71/80 using temporary substrates

Abstract

The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

Claims

1. A peeling off method comprising:

forming a peeled off layer comprising a lamination containing an oxide layer in contact with a metal layer provided over a substrate;

subsequently peeling off said peeled off layer from said substrate inside said oxide layer or at an interface of said oxide layer by physical means.

2. A method according to claim 1, wherein said metal layer is a nitride.

3. A method according to claim 1, wherein said metal layer comprises W, a monolayer consisted of alloy materials or compound materials whose principal component is W or a lamination or a mixture comprising W.

4. A method according to claim 1 wherein said oxide layer comprises a silicon oxide.

5. A method according to claim 1 further comprising conducting heat treatment or a laser light irradiation before said peeling by said physical means.

42. A method according to claim 1, wherein said metal layer comprises an element selected from Ti, Al, Ta, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir and Pt, a monolayer consisted of alloy materials or compound materials whose principal component is said element or a lamination of these metals or a mixture.

43. A method according to claim 1 wherein said oxide layer comprises a single layer comprising metal oxide, or a lamination of a silicon oxide and the metal oxide.

6. A peeling off method comprising:

forming a peeled off layer comprising a lamination containing an oxide layer in contact with a metal layer provided over a substrate;

adhering said peeled off layer to a support;

subsequently peeling off said peeled off layer adhered to said support from said substrate inside said oxide layer or at an interface of said oxide layer by physical means.

7. A method according to claim 6, wherein said metal layer is a nitride.

8. A method according to claim 6, wherein said metal layer comprises W, a monolayer consisted of alloy materials or compound materials whose principal component is W or a lamination or a mixture comprising W.

9. A method according to claim 6 wherein said oxide layer comprises a silicon oxide.

10. A method according to claim 6 further comprising conducting heat treatment or a laser light irradiation before said peeling by said physical means.

11. A method according to claim 6 further comprising conducting a heat processing or an irradiation of a laser beam before said supporting body is adhered.

44. A method according to claim 6, wherein said metal layer comprises an element selected from Ti, Al, Ta, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir and Pt, a monolayer consisted of alloy materials or compound materials whose principal component is said element or a lamination of these metals or a mixture.

45. A method according to claim 6 wherein said oxide layer comprises a single layer comprising metal oxide, or a lamination of a silicon oxide and the metal oxide.

12. A method of manufacturing a semiconductor device comprising:

forming a layer containing a metal material over a substrate,

forming an oxide layer over said layer containing the metal material,

forming an insulating layer over said oxide layer,

forming an element over said insulating layer,

adhering a support to said element;

peeling off said support inside said oxide layer or at an interface with said oxide layer from the substrate by physical means after adhering said support to said element, and

adhering a transferring body to said insulating layer or said oxide layer to sandwich said element between said support and said transferring body.

13. A method according to claim 12, wherein said support is a film substrate or base member.

14. A method according to claim 12 wherein said transferring body is a film substrate or base member.

15. A method according to claim 12 wherein a heat processing or an irradiation of a laser beam is performed before adhering said support.

16. A method according to claim 12 wherein a heat processing or an irradiation of a laser beam is performed before peeling off by said physical means.

17. A method according to claim 12 wherein said element is a thin film transistor comprising a semiconductor layer as an active layer, and in said step of forming said semiconductor layer, a semiconductor layer having an amorphous structure is crystallized by performing a heat processing or an irradiation of a laser beam to be formed into a semiconductor layer having a crystal structure.

18. A method according to claim 12 wherein said support is an opposing substrate, and said element has a pixel electrode, and a liquid crystal material is provided between said pixel electrode and said opposing substrate.

19. A method according to claim 12 wherein said support is a sealing member, and said element is a light emitting element.

20. A method according to claim 12 wherein said oxide layer comprises a silicon oxide.

21. A method according to claim 12 wherein said layer containing the metal material is a nitride.

22. A method according to claim 12 wherein said metal material is W, or a monolayer consisted of alloy material or compound material comprising W as a principal component, or a lamination or a mixture comprising W.

23. A method according to claim 13, wherein said semiconductor device has a first insulating film, a second insulating film and a third insulating film over said film substrate, and a film stress of said second insulating film sandwiched between said first insulating film and said third insulating film is smaller than those of said first insulating film and said third insulating film.

24. A method according to claim 14, wherein said semiconductor device has a first insulating film, a second insulating film and a third insulating film over said film substrate, and a film stress of said second insulating film sandwiched between said first insulating film and said third insulating film is smaller than those of said first insulating film and said third insulating film.

46. A method according to claim 12 wherein said oxide layer comprises a single layer comprising metal oxide, or a lamination of a silicon oxide and the metal oxide.

47. A method according to claim 12 wherein said metal material is an element selected from Ti, Al, Ta, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir and Pt, or a monolayer consisted of alloy material or compound material comprising said element as a principal component, or a lamination of these metals or a mixture of these.

25. A method of manufacturing a semiconductor device comprising:

forming a layer containing a metal material over a substrate,

forming an oxide in a granular shape over said layer containing the metal material,

forming an oxide layer for covering said oxide,

forming an insulating layer over said oxide layer,

forming an element over said insulating layer,

adhering a support to said element;

peeling off said support inside said oxide layer or at an interface with said oxide layer from the substrate by physical means after adhering said support to said element; and

adhering a transferring body to said insulating layer or said oxide layer to sandwich said element between said support and said transferring body.

26. A method according to claim 25, wherein said support is a film substrate or base member.

27. A method according to claim 25 wherein said transferring body is a film substrate or base member.

28. A method according to claim 25 wherein a heat processing or an irradiation of a laser beam is performed before adhering said support.

29. A method according to claim 25 wherein a heat processing or an irradiation of a laser beam is performed before peeling off by said physical means.

30. A method according to claim 25 wherein said element is a thin film transistor comprising a semiconductor layer as an active layer, and in said step of forming said semiconductor layer, a semiconductor layer having an amorphous structure is crystallized by performing a heat processing or an irradiation of a laser beam to be formed into a semiconductor layer having a crystal structure.

31. A method according to claim 25 wherein said support is an opposing substrate, and said element has a pixel electrode, and a liquid crystal material is provided between said pixel electrode and said opposing substrate.

32. A method according to claim 25 wherein said support is a sealing member, and said element is a light emitting element.

33. A method according to claim 25 wherein said oxide layer comprises a silicon oxide.

34. A method according to claim 25 wherein said layer containing the metal material is a nitride.

35. A method according to claim 25 wherein said metal material is W, or a monolayer consisted of alloy material or compound material comprising W as a principal component, or a lamination or a mixture comprising W.

36. A method according to claim 26, wherein said semiconductor device has a first insulating film, a second insulating film and a third insulating film over said film substrate, and a film stress of said second insulating film sandwiched between said first insulating film and said third insulating film is smaller than those of said first insulating film and said third insulating film.

37. A method according to claim 27, wherein said semiconductor device has a first insulating film, a second insulating film and a third insulating film over said film substrate, and a film stress of said second insulating film sandwiched between said first insulating film and said third insulating film is smaller than those of said first insulating film and said third insulating film.

48. A method according to claim 25 wherein said oxide layer is a monolayer comprising a metal oxide or a lamination of a silicon oxide and the metal oxide.

49. A method according to claim 25 wherein said metal material is an element selected from Ti, Al, Ta, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir and Pt, or a monolayer consisted of alloy material or compound material comprising said element as a principal component, or a lamination of these metals or a mixture of these.

38. A method of manufacturing a semiconductor device comprising:

forming a layer containing a metal material over a substrate;

forming an oxide layer over said layer containing the metal material;

forming an insulating layer over said oxide layer;

forming an element over said insulating layer;

peeling off inside said oxide layer or at an interface with said oxide layer from the substrate by physical means;

adhering a first transferring body to said insulating layer or said oxide layer; and

adhering a second transferring body to said element to sandwich said element between said first transferring body and said second transferring body.

39. A method according to claim 38 wherein said layer containing the metal material is a nitride.

40. A method according to claim 38 wherein said metal material is W, or a monolayer consisted of alloy material or compound material comprising W as a principal component, or a lamination or a mixture comprising W.

41. A method according to claim 38, wherein a heat processing or an irradiation of a laser beam is performed before peeling off by said physical means.

50. A method according to claim 38 wherein said metal material is an element selected from Ti, Al, Ta, Mo, Cu, Cr, Nd, Fe, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir and Pt, or a monolayer consisted of alloy material or compound material comprising said element as a principal component, or a lamination of these metals or a mixture of these.