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Method of Forming an Interconnect on a Semiconductor Substrate

  • US 20090239338A1
  • Filed: 11/08/2007
  • Published: 09/24/2009
  • Est. Priority Date: 11/08/2007
  • Status: Active Grant
First Claim
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1. A method of forming a wire bond-free conductive interconnect area on a semiconductor substrate, the method comprising:

  • providing a semiconductor substrate, said semiconductor substrate comprising an electrically conductive protrusion defining a bond pad;

    providing a plurality of electrically conductive nanofilaments; and

    immobilizing the plurality of electrically conductive nanofilaments on the electrically conductive protrusion by allowing at least one random portion of the electrically conductive nanofilaments along the length thereof to attach to the surface of the electrically conductive protrusion, such that an aggregate of loops of electrically conductive nanofilaments is formed on the surface of the electrically conductive protrusion, thereby forming a conductive interconnect area on the electrically conductive protrusion without heat treatment.

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