INTEGRATED PROCESS SYSTEM AND PROCESS SEQUENCE FOR PRODUCTION OF THIN FILM TRANSISTOR ARRAYS USING DOPED OR COMPOUNDED METAL OXIDE SEMICONDUCTOR

• US 20090239359A1
• Filed: 03/17/2009
• Published: 09/24/2009
• Est. Priority Date: 03/24/2008
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: YE, YAN
• Granted Patent: US 7,879,698 B2
• Time in Patent Office: Days
• US Class Current: 438/479
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The present invention generally relates to an integrated processing system and process sequence that may be used for thin film transistor (TFT) fabrication. In fabricating TFTs, numerous processes may be performed on a substrate to ultimately produce the desired TFT. These processes may be performed in numerous processing chambers that may be coupled to a common transfer chamber. The arrangement of the processing chambers and the sequence in which the substrate may pass through the processing chambers may affect the device performance. By placing specific processing chambers around a common transfer chamber, multiple processes may be performed without undue exposure of the TFT to atmosphere. Alternatively, by passing the substrate sequentially through specific processing chambers, multiple processes may be performed without undue exposure of the TFT to atmosphere.

Claims

1. A thin film transistor fabrication method, comprising:

disposing a first substrate into a first processing chamber, the first substrate having a gate electrode disposed thereon;

depositing a gate dielectric layer over the first substrate using a plasma enhanced chemical vapor deposition process;

withdrawing the first substrate from the first processing chamber into a transfer chamber coupled thereto;

disposing the first substrate into a second processing chamber coupled with the transfer chamber;

depositing a semiconductor layer over the gate dielectric layer by a physical vapor deposition process, the semiconductor layer comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, tin, gallium, cadmium, and indium;

withdrawing the first substrate from the second processing chamber into the transfer chamber;

disposing the first substrate into a third processing chamber coupled with the transfer chamber; and

depositing an etch stop layer on the semiconductor layer using a plasma enhanced chemical vapor deposition process.

2. The method of claim 1, wherein the etch stop layer is selected from the group consisting of silicon nitride, silicon oxide, and combinations thereof.

3. The method of claim 1, wherein the gate electrode is selected from the group consisting of chromium, molybdenum, aluminum, tungsten, tantalum, and combinations thereof.

4. The method of claim 1, wherein the physical vapor deposition comprises:

applying a DC electrical bias to a sputtering target comprising one or more elements selected from the group consisting of zinc, indium, cadmium, gallium, and tin; and

introducing a nitrogen containing gas and an oxygen containing gas into the second processing chamber.

5. The method of claim 4, wherein the sputtering target comprises a dopant selected from the group consisting of aluminum, tin, gallium, calcium, silicon, titanium, copper, germanium, indium, nickel, chromium, vanadium, magnesium, and combinations thereof.

6. The method of claim 5, further comprising:

disposing a second substrate into a fourth processing chamber, the second substrate having a gate electrode disposed thereon;

depositing a gate dielectric layer over the second substrate;

withdrawing the second substrate from the fourth processing chamber into the transfer chamber coupled thereto;

disposing the second substrate into a fifth processing chamber coupled with the transfer chamber;

depositing a semiconductor layer over the gate dielectric layer, the semiconductor layer comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, tin, gallium, cadmium, and indium;

withdrawing the second substrate from the fifth processing chamber into the transfer chamber;

disposing the second substrate into the third processing chamber coupled with the transfer chamber; and

depositing an etch stop layer on the semiconductor layer.

7. The method of claim 1, wherein the method is performed without breaking vacuum.

8. The method of claim 1, further comprising:

disposing a second substrate into a fourth processing chamber, the second substrate having a gate electrode disposed thereon;

depositing a gate dielectric layer over the second substrate;

withdrawing the second substrate from the fourth processing chamber into the transfer chamber coupled thereto;

disposing the second substrate into a fifth processing chamber coupled with the transfer chamber;

depositing a semiconductor layer over the gate dielectric layer, the semiconductor layer comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, tin, gallium, cadmium, and indium;

withdrawing the second substrate from the fifth processing chamber into the transfer chamber;

disposing the second substrate into the third processing chamber coupled with the transfer chamber; and

depositing an etch stop layer on the semiconductor layer.

9. The method of claim 8, wherein the method is performed without breaking vacuum.

10. A thin film transistor fabrication method, comprising:

disposing a first substrate into a first processing chamber, the first substrate having a gate electrode disposed thereon;

depositing a gate dielectric layer over the first substrate;

withdrawing the first substrate from the first processing chamber into a transfer chamber coupled thereto;

disposing the first substrate into a second processing chamber coupled with the transfer chamber;

depositing a semiconductor layer over the gate dielectric layer, the semiconductor layer comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, tin, gallium, cadmium, and indium;

withdrawing the first substrate from the second processing chamber into the transfer chamber;

disposing the first substrate into a third processing chamber coupled with the transfer chamber; and

depositing a conductive layer over the semiconductor layer.

11. The method of claim 10, wherein the conductive layer is deposited by physical vapor deposition and wherein the semiconductor layer is deposited by physical vapor deposition.

12. The method of claim 11, wherein the physical vapor deposition for the semiconductor layer comprises:

applying a DC electrical bias to a sputtering target comprising one or more elements selected from the group consisting of zinc, indium, cadmium, gallium, and tin; and

introducing a nitrogen containing gas and an oxygen containing gas into the second processing chamber.

13. The method of claim 12, wherein the sputtering target comprises a dopant selected from the group consisting of aluminum, tin, gallium, calcium, silicon, titanium, copper, germanium, indium, nickel, chromium, vanadium, magnesium, and combinations thereof.

14. The method of claim 10, wherein the method is performed without breaking vacuum.

15. The method of claim 10, wherein an etch stop layer is not deposited between the semiconductor layer and the conductive layer.

16. The method of claim 10, further comprising:

disposing a second substrate into a fourth processing chamber, the second substrate having a gate electrode disposed thereon;

depositing a gate dielectric layer over the second substrate;

withdrawing the second substrate from the fourth processing chamber into the transfer chamber coupled thereto;

disposing the second substrate into a fifth processing chamber coupled with the transfer chamber;

depositing a semiconductor layer over the gate dielectric layer, the semiconductor layer comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, tin, gallium, cadmium, and indium;

withdrawing the second substrate from the fifth processing chamber into the transfer chamber;

disposing the second substrate into the third processing chamber coupled with the transfer chamber; and

depositing a conductive layer over the semiconductor layer.

17. A thin film transistor fabrication method, comprising:

disposing a substrate into a first processing chamber, the substrate having a semiconductor layer and a conductive layer disposed thereover, the semiconductor layer comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, indium, gallium, tin, and cadmium;

etching the conductive layer to expose at least a portion of the semiconductor layer, the etching defining a source electrode and drain electrode;

withdrawing the substrate from the first processing chamber into a transfer chamber coupled with the first processing chamber;

disposing the substrate into a second processing chamber coupled with the transfer chamber; and

etching the semiconductor layer.

18. The method of claim 17, wherein etching the conductive layer comprises plasma etching and wherein etching the semiconductor layer comprises wet etching.

19. The method of claim 17, further comprising:

withdrawing the substrate from the second processing chamber into the transfer chamber;

disposing the substrate into a third processing chamber;

depositing a passivation layer over the source electrode, drain electrode, and semiconductor layer.

20. The method of claim 17, wherein no etch stop layer is present between the semiconductor layer and the conductive layer.