MOLDED CHIP FABRICATION METHOD AND APPARATUS

• US 20090278156A1
• Filed: 07/21/2009
• Published: 11/12/2009
• Est. Priority Date: 09/18/2003
• Status: Active Grant

• Current Assignee: Creeled Incorporated
• Original Assignee: Eric J. Tarsa, James Ibbetson, Michael S. Leung
• Inventors: LEUNG, MICHAEL S., Ibbetson, James, Tarsa, Eric J.
• Granted Patent: US 10,546,978 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/2518 being disposed on at least two different sides of the body, e.g. dual array
• CPC Class Codes: H01L 24/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/1815 Shape
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials

Abstract

A light emitting diode (LED) is disclosed comprising a plurality of semiconductor layers with a first contact on the bottom surface of the semiconductor layers and a second contact on the top surface of the semiconductor layer. A coating is included that comprises a cured binder and a conversion material that at least partially covers the semiconductor layers, wherein the second contact extends through the coating and is exposed on the same plane as the top surface of the coating. An electrical signal applied to the first and second contacts is conducted through the coating to the semiconductor layers causing the LED to emit light. In other embodiments first and second contacts are accessible from one side of the LED. A coating is included that comprises a cured binder and a conversion material. The coating at least partially covers the semiconductor layers, with the first and second contacts extending through the coating and exposed on the same plane as a surface of the coating. An electrical signal applied to the first and second contacts is conducted through the coating to the semiconductor layers causing the LED to emit light.

Claims

1. A light emitting diode (LED), comprising:

a plurality of semiconductor layers;

a top contact in electrical contact with and extending up from said semiconductors layers; and

a coating comprising a cured binder and a conversion material covering and conforming to said semiconductor layers, said contact extending up through said coating and exposed at the top surface of said coating for electrical contact.

2. The LED of claim 1, wherein said coating comprises a phosphor loaded binder.

3. The LED of claim 2, wherein said conversion material is distributed in a substantially uniform manner in said binder.

4. The LED of claim 1, wherein said coating further comprises scattering particles.

5. The LED of claim 1, wherein said coating is formed over said semiconductor layers in a mold formation cavity.

6. The LED of claim 1, wherein said semiconductor layers are coated simultaneously with other similar LEDs.

7. The LED of claim 6, wherein said semiconductor layers are separated from the others in similar LEDs that are simultaneously coated.

8. The LED of claim 1, wherein said contacts extends to the same height as the top surface of said coating on said semiconductor layers.

9. The LED of claim 1, further comprising a bottom contact in electrical contact with said semiconductors layers such that an electrical bias applied across said top and bottom contacts causes said LED to emit light.

10. The LED of claim 1, wherein said coating comprises a planar top surface, wherein said contact is exposed in the same plane as said top surface.

11. A light emitting diode (LED), comprising:

a plurality of semiconductor layers;

a first contact on the bottom surface of said semiconductor layers;

a second contact on the top surface of said semiconductor layer; and

a coating comprising a cured binder and a conversion material that at least partially covers said semiconductor layers, wherein said second contact extends through said coating and is exposed on the same plane as said top surface of said coating, such that an electrical signal applied to said first and second contacts is conducted through said coating to said semiconductor layers causing said LED to emit light.

12. The LED of claim 11, wherein said first contact extends through said coating and is exposed at the bottom surface of said coating.

13. The LED of claim 11, wherein said conversion material is distributed in a substantially uniform manner in said binder.

14. The LED of claim 11, wherein said coating is formed over said semiconductor layers in a mold formation cavity.

15. The LED of claim 11, emitting a white light combination of light from the conversion material and semiconductor layers

16. A light emitting diode (LED), comprising:

a plurality of semiconductor layers;

a top contact on said semiconductor layers; and

a coating comprising a cured binder and a conversion material that at least partially covers said semiconductor layers, said coating having a planar top surface, said top contact extending through said coating and exposed at the same plane as said top surface of said coating by controlling the thickness of said coating over said semiconductor layers.

17. The LED of claim 16, wherein said coating comprises a phosphor loaded binder.

18. The LED of claim 16, wherein said conversion material is distributed in a substantially uniform manner in said binder.

19. The LED of claim 16, wherein said coating further comprises scattering particles.

20. The LED of claim 16, further comprising a bottom contact in electrical contact with said semiconductor layers such that an electrical signal applied across said top and bottom contacts causes said LED to emit light.

21. The LED of claim 20, wherein said bottom contact extends through said coating and is exposed at the bottom surface of said coating.

22. The LED of claim 21, wherein said bottom contact is exposed at the same plane as the bottom surface of said coating.

23. A light emitting diode (LED), comprising:

a plurality of semiconductor layers having lateral geometry;

a first and second contact accessible from one side of said LED; and

a coating comprising a cured binder and a conversion material that at least partially covers said semiconductor layers, wherein said first and second contact extends through said coating and are exposed on the same plane as a surface of said coating, such that an electrical signal applied to said first and second contacts is conducted through said coating to said semiconductor layers causing said LED to emit light.

24. The LED of claim 23, wherein said surface of said coating comprises a bottom planar surface of said coating.

25. The LED of claim 23, wherein said coating covers substantially all of said semiconductor layers.