SEMICONDUCTOR LIGHT EMITTING DIODES HAVING REFLECTIVE STRUCTURES AND METHODS OF FABRICATING SAME
First Claim
Patent Images
1. A light emitting diode comprising:
- a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer;
an anode contact that ohmically contacts the p-type layer and extends on the first face;
a transparent insulating layer that extends on the first face outside the anode contact; and
a reflective cathode contact that electrically contacts the n-type layer and that extends through the transparent insulating layer and onto the transparent insulating layer that is outside the anode contact, to cover substantially all of the first face that is outside the anode contact with the reflective cathode contact.
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Abstract
Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode contact and/or the cathode contact may further provide a hybrid reflective structure on the first face that is configured to reflect substantially all light that emerges from the first face back into the first face. Related fabrication methods are also described.
370 Citations
50 Claims
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1. A light emitting diode comprising:
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a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer; an anode contact that ohmically contacts the p-type layer and extends on the first face; a transparent insulating layer that extends on the first face outside the anode contact; and a reflective cathode contact that electrically contacts the n-type layer and that extends through the transparent insulating layer and onto the transparent insulating layer that is outside the anode contact, to cover substantially all of the first face that is outside the anode contact with the reflective cathode contact. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A light emitting diode comprising:
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a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer; an anode contact that ohmically contacts the p-type layer and extends on the first face; and a cathode contact that ohmically contacts the n-type layer and also extends on the first face; wherein the anode contact and/or the cathode contact further comprise a reflective structure on the first face that is configured to reflect substantially all light that emerges from the first face back into the first face. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33)
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34. A light emitting diode comprising:
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a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer; a reflective anode contact that ohmically contacts the p-type layer and extends on the first face; and a reflective cathode contact that ohmically contacts the n-type layer and that extends on the first face, wherein the reflective anode contact and the reflective cathode contact are configured to collectively reflect substantially all light that emerges from the first face back into the first face. - View Dependent Claims (35, 36, 37, 38)
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39. A light emitting diode comprising:
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a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer; a transparent anode contact that ohmically contacts the p-type layer and extends on the first face; a transparent cathode contact that ohmically contacts the n-type layer and that extends on the first face; a transparent insulating layer that extends on the first face including on the transparent anode contact and the transparent cathode contact; and a reflective layer that is on the transparent insulating layer and that substantially covers the first face. - View Dependent Claims (40, 41, 42, 43, 44)
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45. A method of fabricating a light emitting diode comprising:
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etching a via through a p-type layer at a first face of a diode region to expose an n-type layer therein; forming an anode contact on the first face that ohmically contacts the p-type layer; forming a transparent insulating layer on sidewalls of the via and extending onto the first face outside the via; and forming a reflective cathode contact that ohmically contacts the n-type layer on a floor of the via and that extends on the transparent layer that is on the sidewalls of the via and on the transparent layer that is on the first face outside the via, to cover substantially all of the first face that is outside the anode contact with the reflective cathode contact. - View Dependent Claims (46, 47, 48, 49, 50)
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Specification