SILICON CARBIDE SINGLE CRYSTAL WAFER AND PRODUCING METHOD THEREOF

• US 20090302326A1
• Filed: 04/19/2006
• Published: 12/10/2009
• Est. Priority Date: 04/22/2005
• Status: Active Grant

• Current Assignee: Resonac Corp. (Resonac Holdings Corp.)
• Original Assignee: Bridgestone Corporation
• Inventors: Maruyama, Takayuki
• Granted Patent: US 8,221,549 B2
• Time in Patent Office: Days
• US Class Current: 257/77
• CPC Class Codes: C30B 25/00 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/36 Carbides
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence

Abstract

A silicon carbide single crystal wafer wherein a substrate is cut out at an OFF angle from a (0001) c plane of an α-type silicon carbide single crystal of less than 2° and in an OFF direction in which a deviation from a (11-20) direction is less than 10°, the number of substantially triangular lamination defects exposed from a surface of a wafer which is epitaxial grown on the substrate is less than 4/cm² over the entire surface of the wafer. The invention provides a producing method of a silicon carbide single crystal wafer capable of enhancing the utility ratio of the bulk silicon carbide single crystal, the element characteristics and the cleavage, as well as a silicon carbide single crystal wafer obtained by such a producing method.

Claims

1. A silicon carbide single crystal wafer wherein a substrate is cut out at an OFF angle from a (0001) c plane of an α

-type silicon carbide single crystal of less than 2° and

in an OFF direction in which a deviation from a (11-20) direction is less than 10°

, the number of substantially triangular lamination defects exposed from a surface of a wafer which is epitaxial grown on the substrate is less than 4/cm² over the entire surface of the wafer.

2. The silicon carbide single crystal wafer according to claim 1, wherein the number of substantially triangular lamination defects which are found after molten alkali etching processing is less than 4/cm² over the entire surface of the wafer.

3. The silicon carbide single crystal wafer according to claim 1, wherein surface roughness of the entire surface of the wafer is 2 nm or less and the surface is flat.

4. The silicon carbide single crystal wafer according to claim 1, wherein the OFF angle is in a range of 0.1 to 1°

.

5. The silicon carbide single crystal wafer according to claim 1, wherein the OFF direction has a deviation from a (11-20) direction in a range of 0 to 5°

.

6. A producing method of a silicon carbide single crystal wafer comprising:

cutting out a wafer in an OFF direction in which at an OFF angle from a (0001) c plane of an α

-type silicon carbide single crystal is less than 2° and

a deviation from a (11-20) direction is less than 10°

,

disposing the wafer in a reaction container,

supplying silicon source gas and carbon source gas into the reaction container, and

reacting the silicon source gas and the carbon source gas with each other and for epitaxially growing an α

-type (hexagonal) silicon carbide single crystal on the wafer.

7. The producing method of the silicon carbide single crystal wafer according to claim 6, wherein the OFF angle is in a range of 0.1 to 1°

.

8. The producing method of the silicon carbide single crystal wafer according to claim 6, wherein the OFF direction has a deviation from a (11-20) direction in a range of 0 to 5°

.

9. The producing method of the silicon carbide single crystal wafer according to claim 6, wherein a surface processing is carried out before the epitaxial growth so that the surface of the wafer cut out from the silicon carbide single crystal does not include working damage.

10. The producing method of the silicon carbide single crystal wafer according to claim 6, wherein a supply ratio (C/Si) of the carbon source gas (C) and the silicon source gas (Si) is 1.5 or less.

11. The producing method of the silicon carbide single crystal wafer according to claim 6, wherein the carbon source gas and the silicon source gas react with each other at 1550 to 1700°

C.