Group III nitride-based compound semiconductor light-emitting device and production method therefor
First Claim
1. A Group III nitride-based compound semiconductor light-emitting device comprising a substrate, and a Group III nitride-based compound semiconductor single-crystal layer, wherein metallic aluminum regions are provided between the substrate and the single-crystal layer.
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Abstract
Provided is a Group III nitride-based compound semiconductor light-emitting device including aluminum regions. The Group III nitride-based compound semiconductor light-emitting device includes a sapphire substrate; aluminum regions which are formed on the substrate; an AlN buffer layer; an Si-doped GaN n-contact layer; an n-cladding layer formed of multiple layer units, each including an undoped In0.1Ga0.9N layer, an undoped GaN layer, and a silicon (Si)-doped GaN layer; an MQW light-emitting layer including alternately stacked eight well layers formed of In0.2Ga0.8N and eight barrier layers formed of GaN and Al0.06Ga0.94N; a p-cladding layer formed of multiple layers including a p-type Al0.3Ga0.7N layer and a p-type In0.08Ga0.92N layer; a p-contact layer having a layered structure including two p-type GaN layers having different magnesium concentrations; and an ITO light-transmitting electrode.
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8 Claims
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1. A Group III nitride-based compound semiconductor light-emitting device comprising a substrate, and a Group III nitride-based compound semiconductor single-crystal layer, wherein metallic aluminum regions are provided between the substrate and the single-crystal layer.
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2. A method for producing a Group III nitride-based compound semiconductor light-emitting device, comprising:
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forming metallic aluminum regions on a substrate; forming a Group III nitride-based compound semiconductor single-crystal layer, via a buffer layer, on a portion of the substrate on which no metallic aluminum regions are formed, so that the metallic aluminum regions are covered with the Group III nitride-based compound semiconductor single-crystal layer; and stacking, on the Group III nitride-based compound semiconductor single-crystal layer, a Group III nitride-based compound semiconductor layer having a predetermined composition and containing an impurity of interest. - View Dependent Claims (3, 4, 5, 6, 7, 8)
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