TECHNIQUES AND SYSTEMS FOR ANALYTE DETECTION

• US 20090309614A1
• Filed: 06/15/2009
• Published: 12/17/2009
• Est. Priority Date: 04/09/1998
• Status: Abandoned Application

• Current Assignee: California Institute of Technology
• Original Assignee: California Institute of Technology
• Inventors: Grubbs, Robert H., Lewis, Nathan S., Payne, Richard S., Goodman, Rodney M., Koosh, Vincent F., Dickson, Jeffery
• Application Number:
  US12/484,789
• Publication Number:
  US 20090309614A1
• Time in Patent Office: Days
• US Class Current: 324/663
• CPC Class Codes: G01N 27/126 comprising organic polymers
• CPC Class Codes: G01N 27/128 Microapparatus
• CPC Class Codes: G01N 27/221 by investigating the dielectric properties using microwaves G01N22/00; measuring loss factors or dielectric constants per se G01R27/26
• CPC Class Codes: G01N 33/0031 comprising two or more sensors, e.g. a sensor array electrochemical electrode arrays G01N27/27

Abstract

Techniques are used to detect and identify analytes. Techniques are used to fabricate and manufacture sensors to detect analytes. An analyte (810) is sensed by sensors (820) that output electrical signals in response to the analyte. The electrical signals may be preprocessed (830) by filtering and amplification. In one embodiment, a plurality of sensors are formed on a single integrated circuit. The sensors may have diverse compositions.

Claims

1-17. -17. (canceled)

18. A method of forming a structure comprising:

forming a plurality of electrodes on a relatively planar surface;

forming a hurdle structure on the surface, the hurdle structure extending perpendicular to the surface and positioned between the electrodes; and

depositing a film to cover the hurdle structure and the electrodes.

19. The method of claim 18 wherein a thickness of the film is determined by the surface tension of the film.

20. The method of claim 18 wherein the hurdle structure is formed using micromachining techniques.

21. The method of claim 18 wherein the electrodes electrically couple the sensor material to semiconductor devices beneath the surface.

22. The method of claim 18 wherein the electrodes are used to measure a resistance of the sensor material.

23. The method of claim 18 wherein the electrodes are used to measure a resistance of the sensor material along a current path that is perpendicular to the surface.

24-34. -34. (canceled)

35. A detecting device, comprising:

a plurality of electrodes provided on a relatively planar surface;

a hurdle structure provided on the surface, the hurdle structure extending perpendicular to the surface and positioned between the electrodes; and

a film covering the hurdle structure and the electrodes.

36. The detecting device of claim 35 wherein a thickness of the film is determined by the surface tension of the film.

37. The detecting device of claim 35 wherein the hurdle structure is formed using micromachining techniques.

38. The detecting device of claim 35 wherein the electrodes electrically couple the sensor material to semiconductor devices beneath the surface.

39. The detecting device of claim 35 wherein the electrodes are used to measure a resistance of the sensor material.

40. The detecting device of claim 35 wherein the electrodes are used to measure a resistance of the sensor material along a current path that is perpendicular to the surface.