Compliant Substrate In Particular For Hetero-Epitaxial Depositing

• US 20090311477A1
• Filed: 08/19/2009
• Published: 12/17/2009
• Est. Priority Date: 01/30/1998
• Status: Abandoned Application

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: MORICEAU, Hubert, JALAGUIER, Eric, BRUEL, Michel, ASPAR, Bernard
• Application Number:
  US12/544,202
• Publication Number:
  US 20090311477A1
• Time in Patent Office: Days
• US Class Current: 428/141
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: Y10T 428/24355 Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

The invention relates to a compliant substrate (5) comprising a carrier (1) and at least one thin layer (4), formed on the surface of the carrier and intended to receive, in integral manner, a stress-giving structure. The carrier (1) and the thin layer (4) are joined to one another by joining means (3) such that the stresses brought by said structure are absorbed in whole or in part by the thin layer (4) and/or by the joining means (3) which comprise at least one joining zone chosen from among the following joining zones: a layer of microcavities and/or a bonding interface whose bonding energy is controlled to permit absorption of said stresses.

Claims

1-24. -24. (canceled)

25. Compliant substrate comprising a carrier and a structure comprising at least one thin layer, the structure being bonded on a surface of said carrier by molecular adhesion to constitute a bonding interface whose bonding energy is controlled to permit absorption, in whole or in part by the bonding interface, of stresses brought to said compliant substrate.

26. Compliant substrate according to claim 25, wherein said bonding interface is an interface resulting from a surface preparation and/or an interface resulting from a heat treatment and/or an interface resulting from a creation of defects.

27. Compliant substrate according to claim 26, wherein said surface preparation is a control of roughness and/or hydrophylia.

28. Compliant substrate according to claim 25 where said structure also comprises at least one intermediate layer between the thin layer and the carrier.

29. Compliant substrate according to claim 28, wherein the intermediate layer is a metal layer or metal alloy layer.

30. Compliant substrate according to claim 28, wherein said at least one intermediate layer is formed such that it comprises non-homogeneities.

31. Compliant substrate according to claim 25, wherein said stresses are brought by a hetero-epitaxial growth formed on the thin layer.

32. Compliant substrate according to claim 25, wherein the carrier comprises at least one intermediate layer joined to said carrier, the bonding interface being located between said structure and said at least one intermediate layer.

33. Compliant substrate comprising:

a carrier having a first thin layer; and

a structure comprising a second thin layer, the structure being bonded on the first thin layer of said carrier by molecular adhesion to form a bonding interface whose bonding energy is controlled to permit absorption, in whole or in part by the bonding interface, of stresses brought to said compliant substrate.