CMOS IMAGER AND APPARATUS WITH SELECTIVELY SILICIDED GATES
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Abstract
The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned photo shield over the CMOS imager.
34 Citations
105 Claims
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1-86. -86. (canceled)
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87. An apparatus, comprising:
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a pixel array, each pixel of the array comprising at least one silicided transistor gate, at least one transistor source/drain that is not silicided, and at least one photosensor that is not silicided to prevent light blockage; a readout circuit configured to provide correlated sampling of each pixel of the array; and an analog-to-digital converter coupled to receive signals from pixels of the array. - View Dependent Claims (88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102, 103, 104, 105)
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Specification