SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY

• US 20100065877A1
• Filed: 11/23/2009
• Published: 03/18/2010
• Est. Priority Date: 11/04/2004
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: KIM, Hyun Kyung, LEE, Kyu Han, OH, Jeong Tak, CHOI, In Seok, KIM, Je Won, KIM, Sun Woon
• Granted Patent: US 8,071,994 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

Claims

1. A semiconductor light-emitting device, comprising:

a substrate used in growing a semiconductor crystal and made of single component;

a first conductive clad layer, an active layer, and a second conductive clad layer sequentially grown on an upper surface of the substrate covering entire area between opposing side surfaces of the substrate,

wherein the substrate has one side pattern continuously formed along all edges of the upper surface thereof by selectively etching the substrate, the side pattern consisting of protrusion or depression so as to scatter or diffract light, directed to side surfaces of the light-emitting device, to an upper portion or a lower portion of the light-emitting device, and the upper surface of the substrate has no internal pattern,

2. The light-emitting device as set forth in claim 1, wherein the side pattern consists of the depression having a surface slanted outwardly on the upper surface of the substrate.

3. The light-emitting device as set forth in claim 2, wherein the depression has an upper surface comprising the same crystal plane as that of the upper surface of the substrate.

4. The light-emitting device as set forth in claim 1, wherein the substrate has a rectangular-shaped upper surface, and the side pattern is formed along four edges of the upper surface of the substrate.

5. The light-emitting device as set forth in claim 1, wherein the first and second conductive clad layers, and the active layer are nitride semiconductor layers, respectively.

6. The light-emitting device as set forth in claim 1, wherein the substrate is selected from a sapphire substrate, a SiC substrate, a Si substrate and a GaAs substrate.

7. A semiconductor light-emitting device, comprising:

a substrate used in growing a semiconductor crystal;

a first conductive clad layer, an active layer, and a second conductive clad layer sequentially grown on an upper surface of the substrate-covering entire area between opposing side surfaces the substrate,

wherein the substrate has at least one side pattern and a plurality of internal patterns; and

wherein the at least one side pattern is a protrusion or depression continuously formed along at least one edge of the upper surface thereof, and each of the internal patterns is convex or concave discontinuously formed on the upper surface thereof.