SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD

• US 20100072485A1
• Filed: 03/25/2008
• Published: 03/25/2010
• Est. Priority Date: 03/26/2007
• Status: Abandoned Application

• Current Assignee: Kyoto University
• Original Assignee: Kyoto University
• Inventors: Suda, Jun, Kimoto, Tsunenobu
• Application Number:
  US12/450,424
• Publication Number:
  US 20100072485A1
• Time in Patent Office: Days
• US Class Current: 257/77
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02F 1/3556 Semiconductor materials, e.g. quantum wells
• CPC Class Codes: G02F 1/3558 Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]
• CPC Class Codes: G02F 2202/10 semiconductor
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/02447 Silicon carbide
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/8213 the substrate being a semiconductor, using SiC technology H01L21/8258 takes precedence
• CPC Class Codes: H01L 21/8252 the substrate being a semiconductor, using III-V technology H01L21/8258 takes precedence
• CPC Class Codes: H01L 21/8258 the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H01L 29/1608 Silicon carbide

Abstract

One atomic layer of Si atoms 3 is grown on an Si-terminated SiC surface 1a having an Si polar face, and one atomic layer of C atoms 5 is further grown thereon. Then, Si and C are supplied to form an SiC layer. The surface of the SiC layer thus grown is a C polar face opposite to the Si polar face. That is, according to the above-described step, it is possible to grow an SiC polarity-reversed layer 1x having a C polarity on an SiC layer 1 having an Si polarity, with one atomic layer of an Si intermediate layer b interposed therebetween. Consequently, it is possible to provide a technique to reverse the polarity of SiC on the surface.

Claims

1. A semiconductor device comprising:

a first SiC layer having a first polar face;

an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si layer or a C layer; and

a second SiC layer formed by being deposited on the intermediate layer and having a second polar face opposite to the first polar face.

4. The semiconductor device according to claim 1, wherein there is a region on the first SiC layer in which the intermediate layer does not exist, and a third SiC layer having a polar face identical to the first polar face is formed in the region.

5. The semiconductor device according to claim 1, wherein there is a region on the first SiC layer in which the intermediate layer does not exist, and a second group III nitride layer or group II oxide layer having a polar face identical to the first polar face is formed in the region.

6. The semiconductor device according to claim 1, wherein there is a region on the first SiC layer in which the intermediate layer does not exist, a third SiC layer having a polar face identical to the first polar face is formed in the region, and a second group III nitride layer or group II oxide layer having a polar face identical to the first polar face is further formed on the third SiC layer.

9. The semiconductor device according to claim 1, characterized in that the intermediate layer is an odd number of atomic layers.

10. The semiconductor device according to claim 1, characterized in that the intermediate layer is one atomic layer.

11. The semiconductor device according to claim 1, characterized in that the thickness of the intermediate layer is 100 nm or smaller.

12. The semiconductor device according to claim 1, characterized in that the first polar face is the (0001) Si polar face of 4H-, 6H- or 15R-SiC or the (111) Si polar face of 3C-SiC, or a face the deviation of which in a plane direction from the (0001) Si polar face or the (111) Si polar face is no larger than 10 degrees.

13. The semiconductor device according to claim 1, characterized in that the first polar face is the (000-1) C (carbon) polar face of 4H-, 6H- or 15R-SiC or the (-1-1-1) C polar face of 3C-SiC, or a face the deviation of which in a plane direction from the (000-1) C polar face or the (-1-1-1) C polar face is no larger than 10 degrees.

2. A semiconductor device comprising:

a first SiC layer having a first polar face;

an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si layer or a C layer; and

a first group III nitride layer or group II oxide layer formed by being deposited on the intermediate layer and having a second polar face opposite to the first polar face.

14. The semiconductor device according to claim 2, characterized in that the first polar face is the (0001) Si polar face of 4H-, 6H- or 15R-SiC or the (111) Si polar face of 3C-SiC, or a face the deviation of which in a plane direction from the (0001) Si polar face or the (111) Si polar face is no larger than 10 degrees, and the second polar face is the (000-1) nitrogen or O (oxygen) polar face of a group III nitride layer or a group II oxide layer, or a face the deviation of which in a plane direction from the (000-1) face is no larger than 10 degrees.

15. The semiconductor device according to claim 2, characterized in that the first polar face is the (000-1) C polar face of 4H-, 6H- or 15R-SiC or the (-1-1-1) Si polar face of 3C-SiC, or a face the deviation of which in a plane direction from the (000-1) C polar face or the (-1-1-1) Si polar face is no larger than 10 degrees, and the second polar face is the (0001) group III or group II polar face of a group III nitride layer or a group II oxide layer, or a face the deviation of which in a plane direction from the (0001) face is no larger than 10 degrees.

25. The semiconductor device according to claim 2, wherein there is a region on the first SiC layer in which the intermediate layer does not exist, and a third SiC layer having a polar face identical to the first polar face is formed in the region.

27. The semiconductor device according to claim 2, wherein there is a region on the first SiC layer in which the intermediate layer does not exist, and a second group III nitride layer or group II oxide layer having a polar face identical to the first polar face is formed in the region.

29. The semiconductor device according to claim 2, wherein there is a region on the first SiC layer in which the intermediate layer does not exist, a third SiC layer having a polar face identical to the first polar face is formed in the region, and a second group III nitride layer or group II oxide layer having a polar face identical to the first polar face is further formed on the third SiC layer.

31. The semiconductor device according to claim 2, characterized in that the intermediate layer is an odd number of atomic layers.

33. The semiconductor device according to claim 2, characterized in that the intermediate layer is one atomic layer.

35. The semiconductor device according to claim 2, characterized in that the thickness of the intermediate layer is 100 nm or smaller.

37. The semiconductor device according to claim 2, characterized in that the first polar face is the (0001) Si polar face of 4H-, 6H- or 15R-SiC or the (111) Si polar face of 3C-SiC, or a face the deviation of which in a plane direction from the (0001) Si polar face or the (111) Si polar face is no larger than 10 degrees.

39. The semiconductor device according to claim 2, characterized in that the first polar face is the (0001) Si polar face of 4H-, 6H- or 15R-SiC or the (111) Si polar face of 3C-SiC, or a face the deviation of which in a plane direction from the (0001) Si polar face or the (111) Si polar face is no larger than 10 degrees.

3. A semiconductor device comprising:

a first SiC layer having a first polar face;

an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si layer or a C layer;

a second SiC layer formed by being deposited on the intermediate layer and having a second polar face opposite to the first polar face; and

a first group III nitride layer or group II oxide layer deposited on the second SiC layer and having a polar face identical to the second polar face.

26. The semiconductor device according to claim 3, wherein there is a region on the first SiC layer in which the intermediate layer does not exist, and a third SiC layer having a polar face identical to the first polar face is formed in the region.

28. The semiconductor device according to claim 3, wherein there is a region on the first SiC layer in which the intermediate layer does not exist, and a second group III nitride layer or group II oxide layer having a polar face identical to the first polar face is formed in the region.

30. The semiconductor device according to claim 3, wherein there is a region on the first SiC layer in which the intermediate layer does not exist, a third SiC layer having a polar face identical to the first polar face is formed in the region, and a second group III nitride layer or group II oxide layer having a polar face identical to the first polar face is further formed on the third SiC layer.

32. The semiconductor device according to claim 3, characterized in that the intermediate layer is an odd number of atomic layers.

34. The semiconductor device according to claim 3, characterized in that the intermediate layer is one atomic layer.

36. The semiconductor device according to claim 3, characterized in that the thickness of the intermediate layer is 100 nm or smaller.

38. The semiconductor device according to claim 3, characterized in that the first polar face is the (0001) Si polar face of 4H-, 6H- or 15R-SiC or the (111) Si polar face of 3C-SiC, or a face the deviation of which in a plane direction from the (0001) Si polar face or the (111) Si polar face is no larger than 10 degrees.

40. The semiconductor device according to claim 3, characterized in that the first polar face is the (0001) Si polar face of 4H-, 6H- or 15R-SiC or the (111) Si polar face of 3C-SiC, or a face the deviation of which in a plane direction from the (0001) Si polar face or the (111) Si polar face is no larger than 10 degrees.

41. The semiconductor device according to claim 3, characterized in that the first polar face is the (0001) Si polar face of 4H-, 6H- or 15R-SiC or the (111) Si polar face of 3C-SiC, or a face the deviation of which in a plane direction from the (0001) Si polar face or the (111) Si polar face is no larger than 10 degrees, and the second polar face is the (000-1) nitrogen or O (oxygen) polar face of a group III nitride layer or a group II oxide layer, or a face the deviation of which in a plane direction from the (000-1) face is no larger than 10 degrees.

42. The semiconductor device according to claim 3, characterized in that the first polar face is the (000-1) C polar face of 4H-, 6H- or 15R-SiC or the (-1-1-1) Si polar face of 3C-SiC, or a face the deviation of which in a plane direction from the (000-1) C polar face or the (-1-1-1) Si polar face is no larger than 10 degrees, and the second polar face is the (0001) group III or group II polar face of a group III nitride layer or a group II oxide layer, or a face the deviation of which in a plane direction from the (0001) face is no larger than 10 degrees.

7-8. -8. (canceled)

16. A waveguide-type quasi-phase matched wavelength conversion element comprising:

a first optical waveguide structure formed on a first SiC layer having a first polar face and comprised of a first group III nitride or a group II oxide having a polar face identical to the first polar face; and

a second optical waveguide structure comprised of a second group III nitride or group II oxide, formed by being deposited, through an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si layer or a C layer, on the intermediate layer and having a polar face opposite to the first polar face;

wherein the first optical waveguide structure and the second optical waveguide structure are spatially arranged and the optical waveguides of both the first and second optical waveguide structures are connected to each other.

17. An integrated circuit comprising:

a first semiconductor device formed on a first SiC layer having a first polar face and comprised of SiC, a group III nitride or a group II oxide having a polar face identical to the first polar face; and

a second semiconductor device comprised of SiC, a group III nitride or a group II oxide, formed by being deposited, through an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si layer or a C layer, on the intermediate layer and having a polar face opposite to the first polar face.

19. The integrated circuit according to claim 17, characterized in that the first semiconductor device and the second semiconductor device are high electron mobility transistors (HEMTs) having different threshold values.

20. The integrated circuit according to claim 17, characterized in that the first semiconductor device and the second semiconductor device are SiC MOSFETs having different threshold values.

21. The integrated circuit according to claim 17, characterized in that the first semiconductor device is an SiC MOSFET and the second semiconductor device is a high electron mobility transistor (HEMT).

18. A semiconductor device comprising:

a first SiC layer having a first polar face;

an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si_xGe<sub>1−

x</sub> layer; and

a second SiC layer formed by being deposited on the intermediate layer and having a second polar face opposite to the first polar face.

22. A semiconductor substrate comprising:

a first SiC layer having a first polar face;

an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si layer or a C layer; and

a second SiC layer formed by being deposited on the intermediate layer and having a second polar face opposite to the first polar face.

23. A semiconductor substrate comprising:

a first SiC layer having a first polar face;

an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si layer or a C layer; and

a first group III nitride layer or group II oxide layer formed by being deposited on the intermediate layer and having a second polar face opposite to the first polar face.

24. A semiconductor substrate comprising:

a first SiC layer having a first polar face;

an intermediate layer formed by being deposited on the first SiC layer and comprised of an Si layer or a C layer;

a second SiC layer formed by being deposited on the intermediate layer and having a second polar face opposite to the first polar face; and

a first group III nitride layer or group II oxide layer formed by being deposited on the second SiC layer and having a polar face identical to the second polar face.