PROGRAMMING A MEMORY DEVICE TO INCREASE DATA RELIABILITY
First Claim
Patent Images
1. A method for programming a memory array, the method comprising:
- determining a target reliability of data to be programmed; and
programming the data into areas of the memory array wherein the areas are determined in response to the target reliability.
2 Assignments
0 Petitions
Accused Products
Abstract
Methods for programming a memory array, memory devices, and memory systems are disclosed. In one such method, the target reliability of the data to be programmed is determined. The relative reliability of different groups of memory cells of the memory array is determined. The data is programmed into the group of memory cells of the array having a relative reliability corresponding to the target reliability.
16 Citations
23 Claims
-
1. A method for programming a memory array, the method comprising:
-
determining a target reliability of data to be programmed; and programming the data into areas of the memory array wherein the areas are determined in response to the target reliability. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 17)
-
-
10. A method for programming a memory array, the method comprising:
-
determining high bit error rate areas of the memory array; determining a type of data to be programmed to the memory array; and programming the data to areas of the memory array wherein the areas are determined at least partially in response to the high bit error rate areas and the type of data. - View Dependent Claims (11, 12, 13, 14, 15)
-
-
16. A non-volatile memory device comprising:
-
a memory array having relatively low reliability areas of memory cells; and memory control circuitry for controlling operation of the memory device, the memory control circuitry configured to program the relatively low reliability areas of memory cells with data having relatively low target reliability. - View Dependent Claims (18, 19)
-
-
20. A memory system comprising:
-
a system controller for controlling operation of the memory system with memory signals; and a memory device, coupled to the system controller and operating in response to the memory signals, the memory device comprising; an array of non-volatile memory cells having a first group of memory cells having relatively low reliability and a second group of memory cells having relatively high reliability; and memory control circuitry coupled to the array of memory cells and configured to accept a type of data to be programmed and generate programming signals to program the data into one of the first group of memory cells or the second group of memory cells in response to both the type of data and the relative reliability of the group of memory cells. - View Dependent Claims (21, 22, 23)
-
Specification