Low resistivity single crystal silicon carbide wafer
First Claim
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1. A low resistivity silicon carbide single crystal wafer having a specific volume resistance of 0.001 Ω
- cm to 0.012 Ω
cm, 90% or greater of the entire wafer surface area of which is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.
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Abstract
The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.
35 Citations
14 Claims
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1. A low resistivity silicon carbide single crystal wafer having a specific volume resistance of 0.001 Ω
- cm to 0.012 Ω
cm, 90% or greater of the entire wafer surface area of which is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
- cm to 0.012 Ω
Specification