THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND ELECTRONIC APPARATUS

• US 20100084643A1
• Filed: 10/01/2009
• Published: 04/08/2010
• Est. Priority Date: 10/03/2008
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Hirai, Nobukazu
• Granted Patent: US 8,242,501 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/471 the gate dielectric comprising only organic materials
• CPC Class Codes: H10K 10/474 the gate dielectric comprising a multilayered structure
• CPC Class Codes: H10K 10/486 the channel region comprising two or more active layers, e.g. forming pn heterojunctions
• CPC Class Codes: H10K 10/84 Ohmic electrodes, e.g. source or drain electrodes

Abstract

A thin film transistor includes an insulating layer formed from an organic material, an oxide material, or a silicon based material, a source electrode and a drain electrode disposed on the insulating layer by using an electrically conductive oxide material, a self-organized film covering exposed surfaces of the insulating layer, the source electrode, and the drain electrode, and a semiconductor thin film disposed, on the insulating layer provided with the self-organized film, over from the source electrode to the drain electrode.

Claims

1. A thin film transistor comprising:

an insulating layer formed from an organic material, an oxide material, or a silicon based material;

a source electrode and a drain electrode disposed on the insulating layer by using an electrically conductive oxide material;

a self-organized film covering exposed surfaces of the insulating layer, the source electrode, and the drain electrode; and

a semiconductor thin film disposed, on the insulating layer provided with the self-organized film, over from the source electrode to the drain electrode.

2. The thin film transistor according to claim 1,

wherein the source electrode and the drain electrode are formed by laminating a metal material layer on an oxide material layer formed from the electrically conductive oxide material,

the insulating layer constitutes a gate insulating film,

the self-organized film is disposed so as to cover seamlessly an exposed surface of the gate insulating film and exposed surfaces of the oxide material layers constituting the source electrode and the drain electrode, and

a gate electrode is disposed under the gate insulating film.

3. The thin film transistor according to claim 1,

wherein the source electrode and the drain electrode are formed by laminating an oxide material layer, which is formed from the electrically conductive oxide material, on a metal material layer,

the self-organized film is disposed so as to cover seamlessly an exposed surface of the insulating layer and exposed surfaces of the oxide material layers constituting the source electrode and the drain electrode, and

a gate electrode is disposed on the semiconductor thin film with a gate insulating film therebetween.

4. The thin film transistor according to claim 1,

wherein the self-organized film is formed from a silane coupling agent.

5. The thin film transistor according to claim 1,

wherein the semiconductor thin film is an organic semiconductor thin film.

6. A method for manufacturing a thin film transistor, the method comprising the steps of:

forming a source electrode and a drain electrode by using an electrically conductive oxide material on an insulating layer formed from an organic material, an oxide material, or a silicon based material;

forming a self-organized film on exposed surfaces of the insulating layer, the source electrode, and the drain electrode through a surface treatment; and

forming a semiconductor thin film, on the insulating layer provided with the self-organized film, over from the source electrode to the drain electrode.

7. The method for manufacturing a thin film transistor according to claim 6, the method further comprising the step of:

forming the insulating layer as a gate insulating film covering a gate electrode before the forming a source electrode and a drain electrode,

wherein the source electrode and the drain electrode are formed by laminating a metal material layer on an oxide material layer formed from the electrically conductive oxide material in the forming a source electrode and a drain electrode, and

the self-organized film is disposed so as to cover seamlessly an exposed surface of the gate insulating film and exposed surfaces of the oxide material layers constituting the source electrode and the drain electrode in the forming a self-organized film.

8. The method for manufacturing a thin film transistor according to claim 6,

wherein the source electrode and the drain electrode are formed by laminating an oxide material layer formed from the electrically conductive oxide material on a metal material layer in the forming a source electrode and a drain electrode,

the self-organized film is formed on an exposed surface of the insulating layer and exposed surfaces of the oxide material layers constituting the source electrode and the drain electrode in the forming a self-organized film, and

a gate electrode is formed on the semiconductor thin film with a gate insulating film therebetween after the forming a semiconductor thin film.

9. The method for manufacturing a thin film transistor according to claim 6,

wherein a surface treatment by using a silane coupling agent is conducted in the forming a self-organized film.

10. The method for manufacturing a thin film transistor according to claim 6,

wherein an organic semiconductor thin film is formed as the semiconductor thin film in the forming a semiconductor thin film.

11. An electronic apparatus comprising a thin film transistor including:

an insulating layer formed from an organic material, an oxide material, or a silicon based material;

a source electrode and a drain electrode disposed on the insulating layer by using an electrically conductive oxide material;

a self-organized film covering exposed surfaces of the insulating layer, the source electrode, and the drain electrode; and

a semiconductor thin film disposed, on the insulating layer provided with the self-organized film, over from the source electrode to the drain electrode.