SEMICONDUCTOR LIGHT EMITTING APPARATUS
First Claim
1. A semiconductor light emitting apparatus configured to emit light in a light emitting direction, comprising:
- a semiconductor layer having a light emitting layer with a light emitting surface having at least one corner area;
a supporting substrate configured to support the semiconductor layer; and
a wavelength conversion layer formed on top of the semiconductor layer, the wavelength conversion layer having a thickness that becomes thinner in the light emitting direction from a center portion of the wavelength conversion layer to an outer peripheral portion of the wavelength conversion layer, whereinthe at least one corner area includes a non-light-emitting portion where light cannot be projected.
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Accused Products
Abstract
A semiconductor light emitting apparatus for emitting a desired colored light by coating the top surface thereof with a wavelength conversion member prevents the color unevenness from occurring due to the unevenness of the coating thickness of the wavelength conversion member. The semiconductor light emitting apparatus can include a semiconductor layer having a light emitting layer with a light emitting surface having at least one corner area, a supporting substrate configured to support the semiconductor layer, and a wavelength conversion material layer formed on top of the semiconductor layer, the wavelength conversion layer having a thickness thinner from a center portion of the semiconductor layer to an outer peripheral portion. The at least one corner area can include a non-emitting portion where light cannot be projected. The non-emitting portion can be a light shielding portion, a non-light emission portion or a current confined portion.
25 Citations
20 Claims
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1. A semiconductor light emitting apparatus configured to emit light in a light emitting direction, comprising:
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a semiconductor layer having a light emitting layer with a light emitting surface having at least one corner area; a supporting substrate configured to support the semiconductor layer; and a wavelength conversion layer formed on top of the semiconductor layer, the wavelength conversion layer having a thickness that becomes thinner in the light emitting direction from a center portion of the wavelength conversion layer to an outer peripheral portion of the wavelength conversion layer, wherein the at least one corner area includes a non-light-emitting portion where light cannot be projected. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A semiconductor light emitting apparatus configured to emit light in a light emitting direction, comprising:
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a semiconductor layer having a light emitting layer with a light emitting surface having at least one corner area; a supporting substrate configured to support the semiconductor layer; a wavelength conversion layer formed adjacent the semiconductor layer, the wavelength conversion layer having a thickness in the light emitting direction that is relatively larger at a central portion of the wavelength conversion layer and is relatively thinner at an outer peripheral portion of the wavelength conversion layer; and a non-light-emitting portion located at the at least one corner area and from which light is not emitted from the semiconductor light emitting apparatus as viewed from the light emitting direction of the semiconductor light emitting apparatus. - View Dependent Claims (17, 18, 19, 20)
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Specification