Method for making liquid crystal display screen

• US 20100093117A1
• Filed: 09/03/2009
• Published: 04/15/2010
• Est. Priority Date: 07/04/2008
• Status: Active Grant

• Current Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Original Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Inventors: Cheng, Jia-Shyong, Wu, Jeah-Sheng, Fan, Shou-Shan, Jiang, Kai-Li, Chen, Ga-Lane, Liu, Liang
• Granted Patent: US 8,199,123 B2
• Time in Patent Office: Days
• US Class Current: 438/25
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G06F 3/045 using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact
• CPC Class Codes: H10K 30/821 comprising carbon nanotubes
• CPC Class Codes: Y10T 428/269 including synthetic resin or polymer layer or component
• CPC Class Codes: Y10T 428/2913 Rod, strand, filament or fiber

Abstract

A method for making a liquid crystal display screen is provided. The method includes the following steps. A touch panel and a thin film transistor panel are provided, and the touch panel includes at least one TP carbon nanotube layer. The thin film transistor panel includes a plurality of thin film transistors; each of the thin film transistors comprises a TFT carbon nanotube layer. A first polarizer is applied on a surface of the touch panel. Additionally, a liquid crystal layer is provided to be placed between the first polarizer and the thin film transistor panel.

Claims

1. A method for making a liquid crystal display screen, the method comprising the following steps of:

preparing a touch panel and a thin film transistor panel, the touch panel comprises at least one TP carbon nanotube layer, and the thin film transistor panel comprises a plurality of thin film transistors, each of the thin film transistors comprises a TFT carbon nanotube layer;

applying a first polarizer on a surface of the touch panel; and

placing a liquid crystal layer between the first polarizer and the thin film transistor panel.

2. The method of claim 1, wherein the touch panel comprises of a first and second TP carbon nanotube layers, the first TP carbon nanotube layer comprises of at least a first carbon nanotube film, the second TP carbon nanotube layer comprises of at least a second carbon nanotube film, and the touch panel is prepared by following steps of:

forming a first and a second electrode plate, wherein forming the first electrode plate comprises;

supplying a first substrate;

laying the a first carbon nanotube film on the first substrate thereby forming a first conductive layer on the first substrate; and

connecting two first electrodes to the first conductive layer; and

forming the second electrode plate comprises;

supplying a second substrate;

laying the a second carbon nanotube film on the second substrate thereby forming a second conductive layer on the first substrate; and

connecting two second electrodes to the second conductive layer; and

assembling the first electrode plate and the second electrode plate together having a space between the first substrate and the second substrate.

3. The method of claim 2, further comprising laser treating at least one of the first and second carbon nanotube films.

4. The method of claim 2, further comprising an organic solvent treatment on at least one of the first and second carbon nanotube films.

5. The method of claim 4, wherein the at least one of the first and second carbon nanotube films is laid on the first and second substrates before the organic solvent treatment.

6. The method of claim 5, wherein the organic solvent treatment is executed by applying the organic solvent on the carbon nanotube film.

7. The method of claim 6, wherein the organic solvent is applied on the carbon nanotube film by applying the organic solvent on the surface of the first or second carbon nanotube film or placing the first or second carbon nanotube films into a container filled with the organic solvent.

8. The method of claim 2, further comprising steps of:

infiltrating a polymer solution into the at least one of the first and second carbon nanotube films; and

curing the polymer solution to form a TP carbon nanotube composite layer on at least one of the first and second substrates.

9. The method of claim 8, wherein infiltrating the polymer solution into the at least one of the first and second carbon nanotube films comprises the steps of:

coating a layer of polymer solution on at least one of the first and second substrates; and

placing the first or second carbon nanotube film on the layer of polymer solution.

10. The method of claim 2, wherein the first carbon nanotube film is laid on the first substrate along a first direction and the second carbon nanotube film is laid on the second substrate along a second direction, wherein the first direction intersects with the second direction.

11. The method of claim 2, wherein the two first electrodes in the first electrode plate and the two second-electrodes in the second electrode plate are set at angles to each other.

12. The method of claim 2, further comprising steps of:

applying an insulator on the second electrode plate;

placing the first electrode plate on the insulator; and

sealing the first electrode plate, the second electrode plate, and the insulating layer with a sealant, wherein the first conductive layer faces to the second conductive layer.

13. The method of claim 12, further comprising steps of:

applying a slurry comprising a plurality of dot spacers on at least one of the first and second conductive layers; and

drying the slurry resulting in a plurality of dot spacers between the first electrode plate and the second electrode plate.

14. The method of claim 1, further comprising steps of applying a first and a second alignment layer;

wherein the first alignment layer is applied on the first polarizer; and

the second alignment layer is applied on the plurality of thin film transistors, the liquid crystal layer being placed between the first alignment layer and the second alignment layer.

15. The method of claim 1, further comprising a step of placing a second polarizer on a surface of the thin film transistor panel.

16. The method of claim 15, wherein the second polarizer comprises a plurality of carbon nanotubes substantially aligned along a same direction, the first polarizer comprises a plurality of carbon nanotubes substantially aligned along a same direction, and the aligned direction of the carbon nanotubes in the second polarizer is perpendicular to that of the carbon nanotubes in the first polarizer.

17. The method of claim 1, wherein the thin film transistor panel is prepared by the following substeps of:

supplying a third substrate; and

forming a plurality of source lines and a plurality of gate electrodes and a first insulating layer to cover the source lines and the gate electrodes;

applying plurality of TFT carbon nanotube layers on the surface of the first insulating layer, each of the plurality of TFT carbon nanotube layers is corresponding to one of the gate electrodes;

creating a plurality of gate lines parallel to each other and spaced by a certain distance, adjacent two gate lines and adjacent two source lines constitute a grid region;

affixing a second insulating layer covering the gate lines, the source electrodes, the drain electrodes and the TFT carbon nanotube layers, and forming a plurality of through holes in the second insulating layer corresponding to the drain electrodes; and

constructing a plurality of pixel electrodes, the pixel electrode is electrically connected to the drain electrode in each grid region.

18. The method of claim 17, wherein the source lines are parallel to each other and spaced by a distance.

19. The method of claim 17, wherein the conductive layer is patterned by a laser etching method or a plasma etching method.

20. The method of claim 17, wherein the step of forming the plurality of TFT carbon nanotube layers on the first insulating layer comprises the following steps of:

supplying at least one third carbon nanotube film comprising of a plurality of carbon nanotubes arranged along a same direction;

placing the at least one third carbon nanotube film on the surface of the first insulating layer; and

patterning the at least one third carbon nanotube film.

21. The method of claim 17, further comprising a step of eliminating the metallic carbon nanotubes in the TFT carbon nanotube layer, and the step is executed by a method of applying a voltage between the source electrode and the drain electrode or irradiating the TFT carbon nanotube layer with a hydrogen plasma, microwave, terahertz, infrared, ultraviolet, or visible light.