APPARATUS FOR SUPPORTING SUBSTRATE AND PLASMA ETCHING APPARATUS HAVING THE SAME

• US 20100096084A1
• Filed: 04/01/2008
• Published: 04/22/2010
• Est. Priority Date: 04/02/2007
• Status: Active Grant

• Current Assignee: Sosul Co., Ltd.
• Original Assignee: Sosul Co., Ltd.
• Inventors: Lee, Jung Hee, Lee, Won Haeng, Kim, Dong Wan, Lee, Hyang Joo, Jang, Chul Hee, Rha, Kwan Goo
• Granted Patent: US 8,980,049 B2
• Time in Patent Office: Days
• US Class Current: 156/345.33
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/68742 characterised by a lifting arrangement, e.g. lift pins

Abstract

Provided are a substrate supporting apparatus and a plasma etching apparatus having the same. There is provided a substrate supporting apparatus that can separately provide powers to a central region and an edge region by disposing an electrode supporting a substrate at the central region of the substrate supporting apparatus, and disposing an electrode receiving radio frequency (RF) power at the edge region of the substrate supporting apparatus. There is provided a substrate edge etching apparatus having the substrate supporting apparatus for removing layers or particles deposited in an edge region of a semiconductor substrate and preventing damage of a center region of the semiconductor substrate during an etching process of the substrate edge.

Claims

1. A plasma etching apparatus, comprising:

a chamber comprising a reaction compartment;

a plasma generator disposed at the chamber;

a mask part disposed in the reaction compartment;

a substrate support disposed under the mask part; and

a gas supply unit configured to supply a process gas to the reaction compartment.

2. The plasma etching apparatus of claim 1, wherein the chamber comprises upper and lower chambers that are detachably coupled to each other and include a heating unit,

wherein a through hole is disposed in an upper wall of the lower chamber, and the upper chamber comprises a recess corresponding to the through hole.

3. The plasma etching apparatus of claim 2, wherein the heating unit comprises:

a hot wire disposed in walls of the upper and lower chambers or on sides of the upper and lower chambers; and

a power supply configured to supply power to the hot wire.

4. The plasma etching apparatus of claim 1, further comprising a shield part configured to form a separation compartment in the chamber.

5. The plasma etching apparatus of claim 4, wherein the chamber comprises upper and lower chambers that are detachably coupled to each other and include a heating unit,

wherein the shield part is formed to have a ring shape extending from an upper wall of the lower chamber to an upper wall of the upper chamber.

6. The plasma etching apparatus of claim 4, wherein the plasma generator comprises:

an antenna part disposed in the separation compartment outside the shield part; and

a plasma power supply configured to supply plasma power to the antenna part.

7. The plasma etching apparatus of claim 4, further comprising a Faraday shield disposed around a periphery of the shield part.

8. The plasma etching apparatus of claim 1, wherein the substrate support is configured to expose an edge region of the substrate having approximately 0.1 mm to 5 mm width,

the substrate support is disposed adjacent to the mask part so that the distance between the substrate support and the mask part is approximately 0.1 mm to 10 mm, and

the mask part is manufactured to have the same diameter as the substrate support or the substrate.

9. The plasma etching apparatus of claim 1, wherein the substrate support comprises a body portion on which a substrate is seated;

a first electrode provided at a central region inside the body portion;

a second electrode provided at an edge region inside the body portion;

a fixing power supply unit configured to supply power to the first electrode to fix the substrate; and

a bias power supply unit configured to supply bias power to the second electrode.

10. The plasma etching apparatus of claim 1 further comprising:

an upper electrode disposed at a peripheral portion of the mask part;

a lower electrode disposed at a peripheral portion of the substrate support; and

an insulation layer disposed between the lower electrode and the substrate support.

11. The plasma etching apparatus of claim 1, further comprising a substrate heating unit disposed in the substrate support for heating the substrate support.

12. The plasma etching apparatus of claim 1, wherein the gas supply unit comprises:

an inert gas supply unit configured to supply an inert gas to a bottom surface region of the mask part; and

a process gas supply unit configured to supply a process gas to a lateral surface region of the mask part.

13. The plasma etching apparatus of claim 12, wherein the inert gas supply unit comprises an inert gas tank, and an extension passage extending from the inert gas tank into the mask part;

a plurality of branch passages branching off from the extension passage; and

a plurality of injection nozzle parts extending from the branch passages to a bottom surface of the mask part.

14. The plasma etching apparatus of claim 13, wherein each of the injection nozzle parts comprises:

an injection hole disposed in the bottom surface of the mask part; and

a nozzle passage connected between the injection hole and the branch passage, wherein the nozzle passage tapers toward the injection hole.

15. The plasma etching apparatus of claim 12, comprising a baffle configured to uniformly inject inert gas from the inert gas supply unit to the bottom surface region of the mask part.

16. The plasma etching apparatus of claim 12, wherein the process gas supply unit comprises:

a process gas tank;

a gas pipe extending to a sidewall surface region of the mask part through the mask part; and

an injector disposed along a sidewall surface of the mask part for injecting a process gas received from the gas pipe.

17. A substrate supporting apparatus comprising:

a body portion on which a substrate is seated;

a first electrode provided at a central region inside the body portion;

a second electrode provided at an edge region inside the body portion;

a fixing power supply unit configured to supply power to the first electrode to fix the substrate; and

a bias power supply unit configured to supply bias power to the second electrode.

18. The substrate supporting apparatus of claim 17, wherein the first electrode is formed in a circular plate shape, and the second electrode is formed in a ring shape provided around the first electrode.

19. The substrate supporting apparatus of claim 17, wherein the fixing power supply unit applies direct current (DC) power to the first electrode, and the bias power supply unit applies high frequency power to the second electrode.

20. The substrate supporting apparatus of claim 17, wherein a high frequency line pipe, a DC power line pipe, a refrigerant pipe, and a lift pin pipe are located in the central region of the body portion.

21. A plasma etching apparatus comprising:

a chamber having a reaction compartment;

a mask part provided in the reaction compartment; and

a substrate support comprising a body portion on which a substrate is seated,

a first electrode provided at a central region inside a body portion, a second electrode provided at an edge region inside the body portion, a fixing power supply unit configured to supply power to the first electrode to fix the substrate, and a bias power supply unit configured to supply bias power to the second electrode.

22. The plasma etching apparatus of claim 21, wherein the first electrode is formed in a circular plate shape, and the first and second electrodes are separated into a plurality of blocks.

23. A plasma etching apparatus, comprising:

a substrate support configured to support a center region of a substrate;

a mask part disposed above the substrate support to cover the center region of the substrate;

a chamber configured to accommodate the substrate support and the mask part, the chamber comprising a heating unit disposed at a wall thereof;

a plasma generator configured to generate plasma in a region surrounded by the substrate support, the mask part and a sidewall of the chamber; and

a gas supply unit configured to supply a process gas to an inner region of the chamber.

24. The plasma etching apparatus of claim 23, wherein the plasma generator comprises:

an antenna part disposed in a region around the mask part in the chamber; and

a plasma power supply configured to supply plasma power to the antenna part.

25. The plasma etching apparatus of claim 24, further comprising a shield part disposed between the antenna part and the mask part so as to separate the antenna part from the inner region of the chamber, and a Faraday shield disposed in a region between the shield part and the antenna part.