SYSTEMS AND METHODS FOR DISCHARGING BUS VOLTAGE USING SEMICONDUCTOR DEVICES

• US 20100102638A1
• Filed: 10/23/2008
• Published: 04/29/2010
• Est. Priority Date: 10/23/2008
• Status: Active Grant

• Current Assignee: GM Global Technology Operations LLC (General Motors Company)
• Original Assignee: GM Global Technology Operations Incorporated (Motors Liquidation Co. GUC Trust)
• Inventors: RAISER, STEPHEN, WOODY, GEORGE R., HENZE, CHRISTOPHER P., CHEN, KEMING
• Granted Patent: US 8,022,569 B2
• Time in Patent Office: Days
• US Class Current: 307/100
• CPC Class Codes: B60L 3/0046 relating to electric energy storage systems, e.g. batteries or capacitors
• CPC Class Codes: B60L 3/04 Cutting off the power supply under fault conditions protective devices and circuit arrangements in general H01H; H02H
• CPC Class Codes: H02M 1/322 Means for rapidly discharging a capacitor of the converter for protecting electrical components or for preventing electrical shock

Abstract

Systems and methods are provided for discharging a high-voltage bus using semiconductor devices. A discharge system for a first voltage rail and a second voltage rail comprises a first semiconductor device coupled to a first voltage rail and a second semiconductor device coupled between the first semiconductor device and a second voltage rail. A control circuit is coupled to the first semiconductor device and the second semiconductor device. In response to a discharge condition, the control circuit is configured to activate the first semiconductor device and gradually activate the second semiconductor device, such that the energy potential between the first voltage rail and the second voltage rail is gradually dissipated through the semiconductor devices.

Claims

1. A discharge system for a first voltage rail and a second voltage rail, wherein an energy potential exists between the first voltage rail and the second voltage rail, the discharge system comprising:

a first semiconductor device coupled to the first voltage rail;

a second semiconductor device coupled between the first semiconductor device and the second voltage rail; and

a control circuit coupled to the first semiconductor device and the second semiconductor device, the control circuit being configured to;

activate the first semiconductor device in response to a discharge condition; and

gradually activate the second semiconductor device in response to the discharge condition, such that the energy potential is gradually dissipated through the first semiconductor device and the second semiconductor device.

2. The discharge system of claim 1, wherein the control circuit comprises a first gate drive coupled to a gate terminal of the first semiconductor device, the first gate drive being configured to apply a constant voltage to the gate terminal, wherein the constant voltage is greater than a threshold voltage for the first semiconductor device.

3. The discharge system of claim 2, wherein the control circuit comprises:

a first switch coupled to the first semiconductor device; and

a controller coupled to the first switch, the controller being configured to activate the first semiconductor device in response to the discharge condition by activating the first switch.

4. The discharge system of claim 2, wherein the constant voltage is less than a saturation voltage for the first semiconductor device.

5. The discharge system of claim 1, wherein the control circuit comprises a second gate drive coupled to a gate terminal of the second semiconductor device, the second gate drive being configured to apply a control voltage to the gate terminal, wherein the second gate drive gradually varies the control voltage between a first voltage and a second voltage, the first voltage being less than a threshold voltage of the second semiconductor device and the second voltage being greater than the threshold voltage.

6. The discharge system of claim 5, wherein the control circuit comprises:

a second switch coupled to the second semiconductor device; and

a controller coupled to the second switch, the controller being configured to activate the second semiconductor device in response to the discharge condition by activating the second switch.

7. The discharge system of claim 5, wherein the second gate drive is configured to linearly vary the control voltage from the first voltage to the second voltage.

8. The discharge system of claim 7, wherein the second gate drive varies the control voltage over a time period being less than three seconds.

9. The discharge system of claim 5, wherein the second voltage is less than a saturation voltage for the second semiconductor device.

10. The discharge system of claim 1, wherein the first semiconductor device and the second semiconductor device comprise an inverter phase leg.

11. The discharge system of claim 1, further comprising a capacitor coupled between the first voltage rail and the second voltage rail, wherein the energy potential is stored in the capacitor.

12. An electrical system for use in a vehicle, the electrical system comprising:

a capacitance between a first voltage rail and a second voltage rail, the capacitance having a stored energy;

an inverter module, the inverter module having a phase leg, wherein the phase leg includes;

a first transistor coupled to the first voltage rail, the first transistor having a first gate terminal and a first threshold voltage; and

a second transistor coupled between the first transistor and the second voltage rail, the second transistor having a second gate terminal and a second threshold voltage; and

a control circuit coupled to the inverter module, the control circuit being configured to;

apply a constant voltage to the first gate terminal, the constant voltage being greater than the first threshold voltage;

apply a control voltage to the second gate terminal, the control voltage being initially less than the second threshold voltage; and

gradually increase the control voltage to a voltage greater than the second threshold voltage, such that the second transistor is gradually activated and the stored energy is gradually dissipated through the first transistor and the second transistor.

13. The electrical system of claim 12, wherein the control circuit is configured to linearly increase the control voltage.

14. The electrical system of claim 13, wherein the control circuit is configured to linearly increase the control voltage over a time period being less than three seconds.

15. The electrical system of claim 12, wherein the constant voltage is less than a saturation voltage for the first transistor.

16. A method for discharging an energy potential between a first voltage rail and a second voltage rail using an inverter phase leg coupled between the first voltage rail and the second voltage rail, the inverter phase leg being controlled by a gate driver circuit, the method comprising:

detecting a discharge condition; and

setting the gate driver circuit to a discharge mode in response to detection of the discharge condition, wherein the energy potential is gradually dissipated through the inverter phase leg.

17. The method of claim 16, wherein setting the gate driver circuit to the discharge mode comprises switching from a normal operating mode for the inverter phase leg to the discharge mode.

18. The method of claim 16, the inverter phase leg including a first transistor coupled to the first voltage rail and a second transistor coupled between the first transistor and the second voltage rail;

wherein setting the gate driver circuit to the discharge mode comprises;

applying a first voltage to a gate terminal of the first transistor, the first voltage being less than a threshold voltage of the first transistor; and

gradually increasing voltage at the gate terminal to a second voltage, the second voltage being at least equal to the threshold voltage of the first transistor.

19. The method of claim 18, wherein:

gradually increasing voltage at the gate terminal comprises linearly increasing voltage from the first voltage to the second voltage over a time period; and

setting the gate driver circuit to the discharge mode comprises applying a constant voltage to a gate terminal of the second transistor, the constant voltage being greater than a threshold voltage for the second transistor.

20. The method of claim 16, the inverter phase leg including a first transistor coupled to the first voltage rail and a second transistor coupled between the first transistor and the second voltage rail;

wherein setting the gate driver circuit to the discharge mode comprises;

applying a first voltage to a gate terminal of the first transistor, the first voltage being greater than a threshold voltage of the first transistor; and

applying a voltage pulse at a gate terminal of the second transistor, the voltage pulse having a duration such that the second transistor does not operate in a saturation mode and the energy potential is gradually dissipated through the inverter phase leg.