SINGLE CRYSTAL SILICON STRUCTURES
First Claim
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1. A semiconductor device structure comprising:
- a single crystal silicon substrate; and
a plurality of single crystal silicon islands isolated from the single crystal silicon substrate and from each other by an oxide material, wherein the plurality of single crystal silicon islands are not oxidized during formation thereof.
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Abstract
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.
73 Citations
20 Claims
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1. A semiconductor device structure comprising:
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a single crystal silicon substrate; and a plurality of single crystal silicon islands isolated from the single crystal silicon substrate and from each other by an oxide material, wherein the plurality of single crystal silicon islands are not oxidized during formation thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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- 9. A semiconductor device structure, comprising a plurality of single crystal silicon structures, each disposed on a pillar extending perpendicularly between a surface of the single crystal silicon substrate and a base of one of the plurality of single crystal silicon islands.
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13. A semiconductor device structure, comprising:
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a single crystal silicon substrate; and at least one undercut defined by concave square corners within the single crystal silicon substrate. - View Dependent Claims (14, 15, 16, 17)
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18. A semiconductor device structure, comprising:
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a single crystal silicon substrate having at least one trench therein; and at least one cavity opening from the at least one trench and defined by substantially square corners in the silicon crystal silicon substrate. - View Dependent Claims (19, 20)
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Specification