SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a gate electrode layer;
a gate insulating layer;
a first oxide semiconductor layer comprising a channel formation region, the first oxide semiconductor layer containing indium, gallium, and zinc;
a source electrode layer; and
a drain electrode layer,wherein the first oxide semiconductor layer contains at least one metal element selected from the group consisting of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum.
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Accused Products
Abstract
It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.
160 Citations
38 Claims
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1. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer; a first oxide semiconductor layer comprising a channel formation region, the first oxide semiconductor layer containing indium, gallium, and zinc; a source electrode layer; and a drain electrode layer, wherein the first oxide semiconductor layer contains at least one metal element selected from the group consisting of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a gate electrode layer over a substrate having an insulating surface; a gate insulating layer over the gate electrode layer; a first oxide semiconductor layer comprising a channel formation region over the gate insulating layer, the first oxide semiconductor layer containing indium, gallium, and zinc; and a source electrode layer and a drain electrode layer over the first oxide semiconductor layer, wherein the first oxide semiconductor layer contains at least one metal element selected from the group consisting of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a gate electrode layer over a substrate having an insulating surface; a gate insulating layer over the gate electrode layer; a source electrode layer and a drain electrode layer over the gate insulating layer; and a first oxide semiconductor layer over the source electrode layer and the drain electrode layer, the first oxide semiconductor layer comprising a channel formation region and containing indium, gallium, and zinc, wherein the first oxide semiconductor layer contains at least one metal element selected from the group consisting of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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24. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer over the gate insulating layer; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; and adding a metal element to a first region which is not covered with the source electrode layer or the drain electrode layer in the oxide semiconductor layer. - View Dependent Claims (25, 26, 27, 28)
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29. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer over the gate insulating layer; adding a metal element to the oxide semiconductor layer; and forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer. - View Dependent Claims (30, 31, 32, 33)
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34. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate having an insulating surface; forming a gate insulating layer over the gate electrode layer; forming a source electrode layer and a drain electrode layer over the gate insulating layer; forming an oxide semiconductor layer over the source electrode layer and the drain electrode layer; and adding a metal element to the oxide semiconductor layer. - View Dependent Claims (35, 36, 37, 38)
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Specification