Apparatus and Method for Improving Drive-Strength and Leakage of Deep Submicron MOS Transistors
First Claim
1. A method for reducing leakage current and increasing drive current in a metal-oxide semiconductor (MOS) transistor having a source terminal, a drain terminal, a gate terminal, and a well terminal, said method comprising the steps of:
- forming a first MOS transistor over a well;
forming, at least one forward biased diode between said gate and said well of said first MOS transistor; and
forming a capacitor in parallel with said at least one forward biased diode.
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Abstract
An apparatus and method of manufacture for metal-oxide semiconductor (MOS) transistors is disclosed. Devices in accordance with the invention are operable at voltages below 2V. The devices are area efficient, have improved drive strength, and have reduced leakage current. A dynamic threshold voltage control scheme comprised of a forward biased diode in parallel with a capacitor is used, implemented without changing the existing MOS technology process. This scheme controls the threshold voltage of each transistor. In the OFF state, the magnitude of the threshold voltage of the transistor increases, keeping the transistor leakage to a minimum. In the ON state, the magnitude of the threshold voltage decreases, resulting in increased drive strength. The invention is particularly useful in MOS technology for both bulk and silicon on insulator (SOI) CMOS. The use of reverse biasing of the well, in conjunction with the above construct to further decrease leakage in a MOS transistor, is also shown.
117 Citations
20 Claims
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1. A method for reducing leakage current and increasing drive current in a metal-oxide semiconductor (MOS) transistor having a source terminal, a drain terminal, a gate terminal, and a well terminal, said method comprising the steps of:
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forming a first MOS transistor over a well; forming, at least one forward biased diode between said gate and said well of said first MOS transistor; and forming a capacitor in parallel with said at least one forward biased diode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for reducing leakage current and increasing drive current in a metal-oxide-semiconductor (MOS) transistor having a source terminal, a drain terminal, a gate terminal, and a well terminal, said method comprising the steps of:
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connecting a control circuit between said gate terminal and said well terminal of said MOS transistor, the control circuit comprised of at least a forward biased diode and at least a capacitor connected in parallel with said diode; operating said control circuit to cause said MOS transistor to have a high threshold voltage in a transistor OFF state; operating said control circuit to cause said MOS transistor to have a low threshold voltage in a transistor ON state; and operating said control circuit to control a waveform at said well terminal of said MOS transistor. - View Dependent Claims (12)
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13. A method for reducing leakage current and increasing drive current in a metal-oxide semiconductor (MOS) transistor having a source terminal, a drain terminal, a gate terminal, and a well terminal, said method comprising the steps of:
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forming a first circuit element comprising at least one forward biased diode connected between said gate and said well of said MOS transistor; and forming a second circuit comprising a capacitor parallel with said first circuit element; wherein said MOS transistor comprises any of an n-channel device and a p-channel device. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification