Piezoelectric Resonator and Piezoelectric Filter Device

• US 20100134210A1
• Filed: 01/06/2010
• Published: 06/03/2010
• Est. Priority Date: 07/20/2007
• Status: Abandoned Application

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Umeda, Keiichi
• Application Number:
  US12/683,092
• Publication Number:
  US 20100134210A1
• Time in Patent Office: Days
• US Class Current: 333/189
• CPC Class Codes: H03H 2003/025 the resonators or networks comprising an acoustic mirror
• CPC Class Codes: H03H 2003/0414 Resonance frequency
• CPC Class Codes: H03H 2003/0471 of a plurality of resonators at different frequencies
• CPC Class Codes: H03H 3/04 for obtaining desired frequency or temperature coefficient
• CPC Class Codes: H03H 9/105 the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
• CPC Class Codes: H03H 9/175 Acoustic mirrors
• CPC Class Codes: H03H 9/564 implemented with thin-film techniques

Abstract

A piezoelectric resonator includes an acoustic reflective layer including first acoustic impedance sub-layers made of a material with relatively low acoustic impedance and second acoustic impedance sub-layers made of a material with relatively high acoustic impedance. A thin-film laminate is disposed on the acoustic reflective layer. The thin-film laminate includes a piezoelectric thin-film, a first electrode, a second electrode greater than the first electrode, and a mass-adding film. The second electrode is disposed on the acoustic reflective layer. The mass-adding film is disposed in at least one portion of a region outside a piezoelectric vibrational section and extends around the first electrode. The second electrode extends over the piezoelectric vibrational section to a region containing the mass-adding film.

Claims

1. A piezoelectric resonator comprising:

a substrate having a first principal surface and a second principal surface;

an acoustic reflective layer disposed on the first principal surface of the substrate, the acoustic reflective layer including first acoustic impedance sub-layers having a first acoustic impedance and second acoustic impedance sub-layers having a second acoustic impedance, the second acoustic impedance being higher than the first acoustic impedance;

a piezoelectric film having a first surface and a second surface;

a first electrode disposed on the first surface of the piezoelectric film;

a second electrode disposed on the second surface of the piezoelectric film and on the acoustic reflective layer, the second electrode being larger than the first electrode, the first and second electrodes and a portion of the piezoelectric film that is disposed therebetween forming a piezoelectric vibrational section; and

a mass-adding film disposed in at least one portion of a region outside the piezoelectric vibrational section and extending around the first electrode,

wherein the second electrode extends over the piezoelectric vibrational section to an area containing the mass-adding film.

2. The piezoelectric resonator according to claim 1, wherein a thickness of the first electrode is different from a thickness of the second electrode.

3. The piezoelectric resonator according to claim 2, wherein the thickness of the second electrode is greater than the thickness of the first electrode.

4. The piezoelectric resonator according to claim 1, wherein the first acoustic impedance sub-layers are selected from the group consisting of SiO₂, SiOC, benzocyclobutene, and polyimide.

5. The piezoelectric resonator according to claim 1, wherein the second acoustic impedance sub-layers are selected from the group consisting of W, Ir, Pt, Mo, AlN, SiN, Al₂O₃, and Ta₂O₅.

6. The piezoelectric resonator according to claim 1, wherein the first acoustic impedance sub-layers are SiO₂ and the second acoustic impedance sub-layers are W or Ta₂O₅.

7. The piezoelectric resonator according to claim 1, wherein the mass-adding film has a shape that is isotropic with respect to a center of the piezoelectric vibrational section.

8. The piezoelectric resonator according to claim 1, further comprising a protective film extending over the first electrode.

9. The piezoelectric resonator according to claim 8, wherein the protective film also extends over the mass-adding film.

10. The piezoelectric resonator according to claim 1, wherein an edge of the mass-adding film extends onto a surface of the first electrode.

11. The piezoelectric resonator according to claim 1, wherein an edge of the mass-adding film proximal to the first electrode is spaced from the first electrode.

12. A piezoelectric filter device comprising:

a plurality of piezoelectric resonators on the substrate, each of the plurality of piezoelectric resonators being the piezoelectric resonator according to claim 1,

wherein the plurality of piezoelectric resonators are electrically connected to each other so as to form a filter circuit.

13. The piezoelectric filter device according to claim 12, wherein at least one of the plurality of piezoelectric resonators is configured to be different from a remainder of the plurality of piezoelectric resonators.

14. The piezoelectric filter device according to claim 13, wherein a thickness of the second electrode of the at least one of the plurality of piezoelectric resonators is different from a thickness of the second electrode of each of the remainder of the plurality of piezoelectric resonators such that a resonant frequency of the at least one of the plurality of piezoelectric resonators is different from the resonant frequency of each of the remainder of the plurality of piezoelectric resonators.

15. The piezoelectric filter device according to claim 12, wherein a thickness of the first electrode and a thickness of the second electrode of at least one of the plurality of piezoelectric resonators are different from each other.

16. The piezoelectric filter device according to claim 15, wherein the thickness of the second electrode of the at least one of the plurality of piezoelectric resonators is greater than the thickness of the first electrode thereof.

17. The piezoelectric filter device according to claim 12, further comprising a cover disposed such that the plurality of piezoelectric resonators are positioned between the substrate and the cover.

18. The piezoelectric filter device according to claim 17, wherein the cover includes electrode pads.