SOLID-STATE IMAGE SENSOR
First Claim
1. A solid-state image sensor, comprising:
- a plurality of pixels which are formed in matrix form on a semiconductor substrate, each pixel having a photoelectric converting element which outputs an electric signal obtained by photoelectric conversion;
a read-out circuit configured to read out the electric signals outputted from the plurality of pixels; and
a signal processing section configured to perform signal process with respect to the electric signals read out from the read-out circuit,wherein the plurality, of pixels includes;
a plurality of first pixels which leads incident light of a visible light wavelength to a corresponding photoelectric conversion element via a transparent layer;
a plurality of second pixels, each having a first color filter having a higher transmissivity with respect to a first visible light wavelength band in a visible light wavelength band, as compared with the other visible light wavelength band;
a plurality of third pixels, each having a second color filter having a higher transmissivity with respect to a second visible light wavelength band different from the first visible light wavelength band in a visible light wavelength band, as compared with the other visible light wavelength band; and
a plurality of fourth pixels, each having a third color filter having a higher transmissivity with respect to a third visible light wavelength band different from the first and second visible light wavelength bands in a visible light wavelength band, as compared with the other visible light wavelength band,wherein the signal processing section includes;
a color acquisition section configured to acquire a first color data value C1, a second color data value C2, a third color data value C3 and a white color data value W in a target pixel block including a plurality of pixels to perform signal process;
a first judgment section configured to determine whether or not the white data value W in the target pixel block is smaller than a predetermined first set value; and
a white color correction section configured to perform correction processing of the white color data value W in the target pixel block based on the following Expression (1) when the judgment result of the first judgment section is NO, and to output the white data value W by itself without performing the correction processing based on the Expression (1) when the judgment result of the first determination section is YES;
W′
=S1C1+S2C2+S3C3
(1)where each of S1, S2, and S3 is a coefficient that is determined based on a color balance.
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Accused Products
Abstract
A solid-state image sensor has a plurality of pixels, a read-out circuit and a signal processing section. The plurality of pixels includes a plurality of first pixels, a plurality of second pixels, a plurality of third pixels and a plurality of fourth pixels. The signal processing section includes a color acquisition section, a first judgment section configured to determine whether or not the white data value W in the target pixel block is smaller than a predetermined first set value, and a white color correction section configured to perform correction processing of the white color data value W in the target pixel block based on the following Expression (1) when the judgment result of the first judgment section is NO, and to output the white data value W by itself without performing the correction processing based on the Expression (1) when the judgment result of the first determination section is YES;
W1=S1C1+S2C2+S3C3 (1)
- where each of S1, S2, and S3 is a coefficient that is determined based on a color balance.
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Citations
25 Claims
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1. A solid-state image sensor, comprising:
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a plurality of pixels which are formed in matrix form on a semiconductor substrate, each pixel having a photoelectric converting element which outputs an electric signal obtained by photoelectric conversion; a read-out circuit configured to read out the electric signals outputted from the plurality of pixels; and a signal processing section configured to perform signal process with respect to the electric signals read out from the read-out circuit, wherein the plurality, of pixels includes; a plurality of first pixels which leads incident light of a visible light wavelength to a corresponding photoelectric conversion element via a transparent layer; a plurality of second pixels, each having a first color filter having a higher transmissivity with respect to a first visible light wavelength band in a visible light wavelength band, as compared with the other visible light wavelength band; a plurality of third pixels, each having a second color filter having a higher transmissivity with respect to a second visible light wavelength band different from the first visible light wavelength band in a visible light wavelength band, as compared with the other visible light wavelength band; and a plurality of fourth pixels, each having a third color filter having a higher transmissivity with respect to a third visible light wavelength band different from the first and second visible light wavelength bands in a visible light wavelength band, as compared with the other visible light wavelength band, wherein the signal processing section includes; a color acquisition section configured to acquire a first color data value C1, a second color data value C2, a third color data value C3 and a white color data value W in a target pixel block including a plurality of pixels to perform signal process; a first judgment section configured to determine whether or not the white data value W in the target pixel block is smaller than a predetermined first set value; and a white color correction section configured to perform correction processing of the white color data value W in the target pixel block based on the following Expression (1) when the judgment result of the first judgment section is NO, and to output the white data value W by itself without performing the correction processing based on the Expression (1) when the judgment result of the first determination section is YES;
W′
=S1C1+S2C2+S3C3
(1)where each of S1, S2, and S3 is a coefficient that is determined based on a color balance. - View Dependent Claims (2, 10, 16, 17, 18, 19, 20, 21, 23, 24, 25)
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3. A solid-state image sensor, comprising:
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a plurality of pixels which are formed in matrix form on a semiconductor substrate, each pixel having a photoelectric converting element which outputs an electric signal obtained by photoelectric conversion; a read-out circuit configured to read out the electric signals outputted from the plurality of pixels; and a signal processing section configured to perform signal process with respect to the electric signals read out from the read-out circuit, wherein the plurality of pixels includes; a plurality of first pixels which leads incident light of a visible light wavelength to a corresponding photoelectric conversion element via a transparent layer; a plurality of second pixels, each having a first color filter having a higher transmissivity with respect to a first visible light wavelength band in a visible light wavelength band, as compared with the other visible light wavelength band; a plurality of third pixels, each having a second color filter having a higher transmissivity with respect to a second visible light wavelength band different from the first visible light wavelength band in a visible light wavelength band, as compared with the other visible light wavelength band; and a plurality of fourth pixels, each having a third color filter having a higher transmissivity with respect to a third visible light wavelength band different from the first and second visible light wavelength bands in a visible light wavelength band, as compared with the other visible light wavelength band, wherein the signal processing section includes; a color acquisition section configured to acquire a first color data value C1, a second color data value C2, a third color data value C3 and a white color data value W in a target pixel block including a plurality of pixels to perform signal process; a color separation processing section configured to separate the white data value into a plurality of colors based on the following Expressions (2) to (4) to generate the first color data value C1W of a first color, the second color data value C2W of a second color and the third color data value C3W of a third color;
C1W←
W·
K1
(2)
C2W←
W·
K2
(3)
C3W←
W·
K3
(4)where K1, K2, and K3 indicate color ratios, and are determined by the color data values C1, C2 and C3. - View Dependent Claims (4, 5, 6, 7, 8)
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9. A solid-state image sensor, comprising:
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a plurality of pixels which are formed in matrix form on a semiconductor substrate, each pixel having a photoelectric converting element which outputs an electric signal obtained by photoelectric conversion; a read-out circuit configured to read out the electric signals outputted from the plurality of pixels; and a signal processing section configured to perform signal process with respect to the electric signals read out from the read-out circuit, wherein the plurality of pixels includes; a plurality of first pixels which leads incident light of a visible light wavelength to a corresponding photoelectric conversion element via a transparent layer; a plurality of second pixels, each having a first color filter having a higher transmissivity with respect to a first visible light wavelength band in a visible light wavelength band, as compared with the other visible light wavelength; a plurality of third pixels, each having a second color filter having a higher transmissivity with respect to a second visible light wavelength band different from the first visible light wavelength band in a visible light wavelength band, as compared with the other visible light wavelength; and a plurality of fourth pixels, each having a third color filter having a higher transmissivity with respect to a third visible light wavelength band different from the first and second visible light wavelength bands in a visible light wavelength band, as compared with the other visible light wavelength, wherein the signal processing section includes; a color acquisition section configured to acquire a first color data value C1 of first color, a second color data value C2 of second color, a third color data value C3 of third color and a white color data value W in a target pixel block including a plurality of pixels to perform signal process; a judgment section configured to judge whether the color data values C1, C2 and C3 are smaller than a predetermined set value; and a low-illuminance correction section configured to retrieve the color data value judged to be smaller than the set value based on the white color data value and the color data value larger than the set value when two larger values among the color data values C1, C2 and C3 are judged to be smaller than the set value. - View Dependent Claims (11, 12, 13, 14, 15)
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22. A solid-state image sensor, comprising:
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a plurality of pixels which are formed in matrix form on a semiconductor substrate, each pixel having a photoelectric converting element which outputs an electric signal obtained by photoelectric conversion; and a read-out circuit configured to read out the electric signals outputted from the plurality of pixels, wherein the plurality of pixels are sorted out into a plurality of pixel blocks in units of two or more pixels; and the plurality of pixels is in a square shape slanted by 45°
with respect to two axes of image pick-up surface, the neighboring pixels being arranged without placing any space, the first and fourth pixels being arranged along a row different from each other.
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Specification