SEMICONDUCTOR LIGHT EMITTING DEVICE

• US 20100171140A1
• Filed: 03/22/2010
• Published: 07/08/2010
• Est. Priority Date: 02/13/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Lee, Sang Bum, Park, Ki Yeol, Cho, Myong Soo, Myoung, Seon Young, CHOI, Pun Jae
• Granted Patent: US 9,018,666 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

Claims

1. A semiconductor light emitting device having a conductive substrate, a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially laminated, the semiconductor light emitting device comprising:

a first electrode layer formed between the conductive substrate and the first conductivity type semiconductor layer; and

a second electrode part including at least one electrode pad unit extending from the first electrode layer to the surface of the second conductivity type semiconductor layer, and electrically insulated from the first electrode layer, the first conductivity type semiconductor layer, and the active layer,

at least one electrode extending unit extending unit extending from the first electrode layer to the inside of the second conductivity type semiconductor layer, and electrically insulated from the first electrode layer, the first conductivity type semiconductor layer, and the active layer, and

an electrode connecting unit formed on the same layer as the first electrode layer, electrically separated from the first electrode layer, and connecting the electrode pad unit and the electrode extending unit.

2. The semiconductor light emitting device of claim 1, wherein a cross-section of the electrode pad unit crossing the active layer is smaller than that of the electrode pad unit crossing the second conductivity type semiconductor layer.

3. The semiconductor light emitting device of claim 1, wherein the electrode connecting unit comprises a plurality of electrode connecting units.

4. The semiconductor light emitting device of claim 3, wherein the plurality of electrode extending units are directly connected to the electrode pad unit by the electrode connecting unit.

5. The semiconductor light emitting device of claim 3, wherein at least one of the plurality of electrode extending units is connected to the electrode pad unit by the electrode extending unit connected to the electrode pad unit.

6. The semiconductor light emitting device of claim 1, wherein the electrode extending unit is separated from the electrode pad unit by a predetermined distance.

7. The semiconductor light emitting device of claim 1, wherein a cross section of the electrode extending unit crossing the active layer is smaller than that of the electrode pad unit crossing the active layer.

8. The semiconductor light emitting device of claim 1, wherein the first electrode layer reflects light generated from the active layer.

9. The semiconductor light emitting device of claim 8, wherein the first electrode layer includes one selected from a group consisting of Ag, Al, and Pt.

10. The semiconductor light emitting device of claim 1, wherein each of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer is formed of a GaN-based compound semiconductor.

11. The semiconductor light emitting device of claim 1, wherein the active layer is formed of a In_xAl_yGa_(1-x-y)N (here, 0≦

x≦

1, 0≦

y≦

1, and 0≦

x+y≦

1)-based compound semiconductor.

12. The semiconductor light emitting device of claim 1, wherein an irregular pattern is formed on the second conductivity type semiconductor layer.

13. The semiconductor light emitting device of claim 1, wherein the second conductivity type semiconductor layer has a photonic crystal structure.

14. The semiconductor light emitting device of claim 1, wherein the conductive substrate is a metallic substrate.

15. The semiconductor light emitting device of claim 14, wherein the metallic substrate includes one selected from a group consisting of Au, Ni, Cu, and W.

16. The semiconductor light emitting device of claim 1, wherein the conductive substrate is a semiconductor substrate.

17. The semiconductor light emitting device of claim 16, wherein the semiconductor substrate includes one selected from a group consisting of Si, Ge, and GaAs.

18. The semiconductor light emitting device of claim 1, wherein the conductive substrate is formed by a plating method.

19. The semiconductor light emitting device of claim 1,

wherein the conductive substrate is formed by a substrate bonding method.