METHOD FOR PREPARING TRANSPARENT CONDUCTING FILM COATED WITH AZO/AG/AZO MULTILAYER THIN FILM

• US 20100193351A1
• Filed: 02/25/2009
• Published: 08/05/2010
• Est. Priority Date: 02/05/2009
• Status: Abandoned Application

• Current Assignee: The Industry & Academic Cooperation In Chungnam National University
• Original Assignee: Industry & Academic Cooperation In Chungnam National University of Republic of Korea
• Inventors: Cho, Hyun-Jin, YOON, Soon-Gil, Park, Kyoung-Woo
• Application Number:
  US12/392,462
• Publication Number:
  US 20100193351A1
• Time in Patent Office: Days
• US Class Current: 204/192.15
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: C23C 14/16 on metallic substrates or on substrates of boron or silicon

Abstract

A method for preparing a transparent conducting film coated with an AZO/Ag/AZO multilayer thin film with low resistivity and high light transmittance, and a transparent conducting film produced by the same method. The method for preparing a transparent conducting film coated with an AZO/Ag/AZO multilayer thin film, includes (a) forming a primary AZO thin film on a substrate using an AZO target doped with Al through a sputtering method; (b) depositing Ag on the primary AZO thin film using the sputtering method to form a deposited Ag layer; and (c) forming a secondary AZO thin film on the Ag thin film using the AZO target doped with Al through a sputtering method.

Claims

1. A method for preparing a transparent conducting film coated with an AZO/Ag/AZO multilayer thin film, the method comprising:

forming a primary AZO thin film on a substrate using an AZO target doped with Al through a sputtering method;

depositing Ag on the primary AZO thin film using the sputtering method to form a deposited Ag layer; and

forming a secondary AZO thin film on the Ag thin film using the AZO target doped with Al through the sputtering method.

2. The method according to claim 1, wherein the thickness of the deposited Ag layer ranges from 5 to 15 nm.

3. The method according to claim 2, wherein the thickness of the deposited Ag layer ranges from 7 to 11 nm.

4. The method according to claim 1, wherein the thicknesses of the primary AZO thin film and the secondary AZO thin film range from 10 to 100 nm, respectively.

5. The method according to claim 1, wherein the substrate is a glass substrate, a quartz substrate or a flexible polymer substrate.

6. The method according to claim 5, wherein the flexible polymer substrate is made of polyethersulfone, polyethylene terephthalate, Polycarbonate, polyimide, or polyethylene naphthalate.

7. A transparent conducting film coated with an AZO/Ag/AZO multilayer thin film prepared by the method according to claim 1.

8. A transparent conducting film coated with an AZO/Ag/AZO multilayer thin film prepared by the method according to claim 5.

9. A transparent conducting film coated with an AZO/Ag/AZO multilayer thin film prepared by the method according to claim 6.

10. The method according to claim 2, wherein the thicknesses of the primary AZO thin film and the secondary AZO thin film range from 10 to 100 nm, respectively.

11. The method according to claim 2, wherein the substrate is a glass substrate, a quartz substrate or a flexible polymer substrate.

12. The method according to claim 11, wherein the flexible polymer substrate is made of polyethersulfone, polyethylene terephthalate, Polycarbonate, polyimide, or polyethylene naphthalate.

13. A transparent conducting film coated with an AZO/Ag/AZO multilayer thin film prepared by the method according to claim 3.

14. A transparent conducting film coated with an AZO/Ag/AZO multilayer thin film prepared by the method according to claim 11.

15. A transparent conducting film coated with an AZO/Ag/AZO multilayer thin film prepared by the method according to claim 12.