NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20100193823A1
• Filed: 04/08/2010
• Published: 08/05/2010
• Est. Priority Date: 11/03/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Pyeon, In Joon, Lee, Su Yeol, Park, Hyun Ju, Kim, Dong Woo, Shin, Hyoun Soo, KIM, Tae Jun
• Granted Patent: US 8,124,997 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Claims

1-14. -14. (canceled)

15. A nitride semiconductor light emitting device comprising:

a conductive substrate;

a light emitting structure comprising a second conductivity nitride layer, an active layer and a first conductivity type nitride layer sequentially formed on the conductive substrate;

an electrode formed on one portion of the first conductivity type nitride layer, the light scattering layer formed of a material of a substrate for nitride single crystal growth and having an upper surface in which uneven surface structures are formed.

16. The device of claim 15, wherein the light scattering layer has a thickness of 50 to 200 μ

m.

17. The device of claim 15, wherein the light scattering layer is formed of a material selected from a group consisting of sapphire, SiC, MgAl₂O₄, MgO, LiAlO₂ and LiGaO₂.

18. The device of claim 15, wherein the conductive substrate is formed of a material selected form a group consisting of Si, Ge, SiC, ZnO and GaAs.

19. The Device of claim 15, wherein the electrode is formed of a material selected form a group consisting of Cr, Au, Ti, Al, Rh, Pt, Ni, W, Ir, V, ITO, CIO, IZO and combination thereof.