NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

  • US 20100207194A1
  • Filed: 02/16/2010
  • Published: 08/19/2010
  • Est. Priority Date: 02/17/2009
  • Status: Active Grant
First Claim
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1. A nonvolatile semiconductor memory device comprising:

  • a semiconductor substrate;

    a stacked body provided on the semiconductor substrate, the stacked body having electrode films and insulating films being alternately stacked;

    a first semiconductor pillar and a second semiconductor pillar provided inside a first through hole penetrating through the stacked body in a stacking direction of the stacked body, the first through hole having a first cross section of a first oblate circle, the first cross section being cut in a direction perpendicular to the stacking direction, the first semiconductor pillar facing the second semiconductor pillar in a first major axis direction of the first oblate circle, the first semiconductor pillar and the second semiconductor pillar extending in the stacking direction;

    a first charge storage layer provided between the electrode film and the first semiconductor pillar; and

    a second charge storage layer provided between the electrode film and the second semiconductor pillar.

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