THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY APPARATUS USING THE SAME
First Claim
1. A thin film transistor comprising:
- a gate electrodes;
a gate insulation layer;
a semiconductor layer formed of an amorphous oxide;
a source electrode;
a drain electrode; and
a protective layer,wherein the protective layer is provided on the semiconductor layer in contact with the semiconductor layer, andwherein the semiconductor layer includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer, the second layer being provided on the protective layer side of the semiconductor layer.
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Abstract
A transistor is constituted of a gate electrode 2, a gate insulation layer 3, a semiconductor layer 4 formed of an amorphous oxide, a source electrode 5, a drain electrode 6 and a protective layer 7. The protective layer 7 is provided on the semiconductor layer 4 in contact with the semiconductor layer 4, and the semiconductor layer 4 includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer. The first layer is provided on the gate electrode 2 side of the semiconductor layer 4 and the second layer is provided on the protective layer 7 side of the semiconductor layer 4.
78 Citations
12 Claims
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1. A thin film transistor comprising:
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a gate electrodes; a gate insulation layer; a semiconductor layer formed of an amorphous oxide; a source electrode; a drain electrode; and a protective layer, wherein the protective layer is provided on the semiconductor layer in contact with the semiconductor layer, and wherein the semiconductor layer includes a first layer at least functioning as a channel layer and a second layer having higher resistance than the first layer, the second layer being provided on the protective layer side of the semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 10, 11)
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8. A method for manufacturing a thin film transistor comprising a gate electrode, a gate insulation layer, a semiconductor layer formed of an amorphous oxide, a source electrode, a drain electrode and a protective layer, wherein the method comprises the steps of:
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forming the gate electrode; forming the gate insulation layer; forming the semiconductor layer; forming the source electrode and the drain electrode; and forming the protective layer, wherein the protective layer is provided on the semiconductor layer in contact with the semiconductor layer, wherein the step of forming the semiconductor layer includes a step of forming a first layer at least functioning as a channel layer and a step of forming a second layer having higher resistance than the first layer, and wherein the protective layer is formed in an oxidative atmosphere.
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9. A method for manufacturing a thin film transistor comprising a gate electrode, a gate insulation layer, a semiconductor layer formed of an amorphous oxide, a source electrode, a drain electrode and a protective layer, wherein the method comprises the steps of:
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forming the gate electrode; forming the gate insulation layer; forming the semiconductor layer; forming the source electrode and the drain electrode; forming the protective layer; and carrying out a heat treatment in an oxidative atmosphere after the protective layer is formed, wherein the protective layer is provided on the semiconductor layer in contact with the semiconductor layer, and wherein the step of carrying out the heat treatment includes a step of forming a first layer which is in contact with the gate insulation layer and at least functions as a channel layer and forming a second layer which is in contact with the protective layer and has higher resistance than the first layer, in the semiconductor layer.
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12. A thin film transistor comprising:
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a gate electrode; a gate insulation layer; a semiconductor layer formed of an amorphous oxide; a source electrode; a drain electrode; and a protective layer, wherein the protective layer is provided on the semiconductor layer in contact with the semiconductor layer, wherein the semiconductor layer includes a first region at least functioning as a channel layer and a second region having a smaller mass density than the first region, the second region being provided on the protective layer side of the semiconductor layer, and wherein the semiconductor layer is oxidized more deeply than the depth of damage the semiconductor layer receives when the protective layer is formed.
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Specification