Printed Dopant Layers
First Claim
1. A method for making a MOS transistor, comprising the steps of:
- a) forming a plurality of semiconductor islands by printing or coating a semiconductor ink on an electrically functional substrate;
b) printing a dielectric layer containing a dopant on or over the plurality of semiconductor islands; and
c) annealing the dielectric layer, the semiconductor islands and the substrate sufficiently to diffuse the dopant into the plurality of semiconductor islands.
3 Assignments
0 Petitions
Accused Products
Abstract
A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
43 Citations
22 Claims
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1. A method for making a MOS transistor, comprising the steps of:
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a) forming a plurality of semiconductor islands by printing or coating a semiconductor ink on an electrically functional substrate; b) printing a dielectric layer containing a dopant on or over the plurality of semiconductor islands; and c) annealing the dielectric layer, the semiconductor islands and the substrate sufficiently to diffuse the dopant into the plurality of semiconductor islands. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. An electronic device, comprising:
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a) a substrate; b) a plurality of physically isolated semiconductor islands on the substrate containing a diffusible dopant; c) a doped dielectric layer in a pattern on or over the plurality of semiconductor islands and the substrate, the doped dielectric layer containing the diffusible dopant; and d) a metal layer in electrical contact with the plurality of semiconductor islands. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22)
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Specification