SEMICONDUCTOR DEVICE

• US 20100270868A1
• Filed: 07/02/2010
• Published: 10/28/2010
• Est. Priority Date: 04/13/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hanaoka, Kazuya, Ohnuma, Hideto, Fujii, Teruyuki
• Granted Patent: US 8,111,198 B2
• Time in Patent Office: Days
• US Class Current: 307/104
• CPC Class Codes: H01Q 1/2208 associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems methods or arrangements for sensing record carriers, e.g. for reading patterns G06K7/00; record carrier for use with machines and with at least a part designed to carry digital markings G06K19/00
• CPC Class Codes: H01Q 23/00 Antennas with active circuits or circuit elements integrated within them or attached to them
• CPC Class Codes: H01Q 9/0407 Substantially flat resonant element parallel to ground plane, e.g. patch antenna dipole H01Q9/285; monopole H01Q9/40

Abstract

An object of the present invention is to prevent electrical characteristics of circuit elements from being adversely affected by copper diffusion in a semiconductor device having an integrated circuit and an antenna formed over the same substrate, which uses copper plating for the antenna. Another object is to prevent a defect of a semiconductor device due to poor connection between an antenna and an integrated circuit in a semiconductor device having the integrated circuit and the antenna formed over the same substrate. In a semiconductor device having an integrated circuit 100 and an antenna 101 formed over one substrate 102, when a copper plating layer 108 is used for a conductor of the antenna 101, it is possible to prevent copper diffusion to circuit elements and decrease an adverse effect on electrical characteristics of circuit elements due to the copper diffusion because a base layer 107 of the antenna 101 uses a nitride film of a predetermined metal. Moreover, by the use of nickel nitride as a metal nitride for the base layer of the antenna, poor connection between the antenna and the integrated circuit can be decreased.

Claims

1. A semiconductor device comprising:

an antenna for communicating information formed over a substrate; and

an integrated circuit formed over the substrate,

wherein the integrated circuit comprises a battery capacitor, a rectifier circuit, a booster circuit,

wherein the battery capacitor is configured to be charged by using the antenna, the rectifier circuit, and the booster circuit,

wherein the antenna includes a base layer and a copper plating layer formed over the base layer,

wherein the base layer comprises a nitride film of an alloy, and

wherein the alloy includes nickel and any of titanium, tantalum, tungsten, or molybdenum.

5. The semiconductor device according to claim 1,

wherein a top surface of the antenna has a rectangular and spiral shape.

9. The semiconductor device according to claim 1,

wherein the battery capacitor is at least one of a double-layer electrolytic capacitor which is formed using an electrode material such as activated carbon, fullerene, or a carbon nanotube.

13. The semiconductor device according to claim 1,

wherein a switching element is disposed between the battery capacitor and the booster circuit.

2. A semiconductor device comprising:

a first antenna for communicating information formed over a substrate;

a second antenna formed over the substrate; and

an integrated circuit formed over the substrate,

wherein the integrated circuit comprises a battery capacitor, a rectifier circuit, a booster circuit,

wherein the battery capacitor is configured to be charged by using the second antenna,

wherein the first antenna and the second antenna include a base layer and a copper plating layer formed over the base layer,

wherein the base layer comprises a nitride film of an alloy, and

wherein the alloy includes nickel and any of titanium, tantalum, tungsten, or molybdenum.

6. The semiconductor device according to claim 2,

wherein a top surface of the first antenna and the second antenna has a rectangular and spiral shape.

10. The semiconductor device according to claim 2,

wherein the battery capacitor is at least one of a double-layer electrolytic capacitor which is formed using an electrode material such as activated carbon, fullerene, or a carbon nanotube.

14. The semiconductor device according to claim 2,

wherein a switching element is disposed between the battery capacitor and the booster circuit.

3. A semiconductor device comprising:

an antenna for communicating information formed over a substrate; and

an integrated circuit formed over the substrate,

wherein the integrated circuit comprises a secondary battery, a rectifier circuit, a booster circuit,

wherein the secondary battery is configured to be charged by using the antenna, the rectifier circuit, and the booster circuit,

wherein the antenna includes a base layer and a copper plating layer formed over the base layer,

wherein the base layer comprises a nitride film of an alloy, and

wherein the alloy includes nickel and any of titanium, tantalum, tungsten, or molybdenum.

7. The semiconductor device according to claim 3,

wherein a top surface of the antenna has a rectangular and spiral shape.

11. The semiconductor device according to claim 3,

wherein the secondary battery is at least one of a lithium polymer battery using gel electrolyte, a lithium ion battery, a nickel metal hydride battery, a nickel cadmium battery, an organic radical battery, a lead-acid battery, an air secondary battery, a nickel-zinc battery and a silver-zinc battery.

15. The semiconductor device according to claim 3,

wherein a switching element is disposed between the secondary battery and the booster circuit.

4. A semiconductor device comprising:

a first antenna for communicating information formed over a substrate;

a second antenna formed over the substrate; and

an integrated circuit formed over the substrate,

wherein the integrated circuit comprises a secondary battery, a rectifier circuit, a booster circuit,

wherein the secondary battery is configured to be charged by using the second antenna,

wherein the first antenna and the second antenna include a base layer and a copper plating layer formed over the base layer,

wherein the base layer comprises a nitride film of an alloy, and

wherein the alloy includes nickel and any of titanium, tantalum, tungsten, or molybdenum.

8. The semiconductor device according to claim 4,

wherein a top surface of the first antenna and the second antenna has a rectangular and spiral shape.

12. The semiconductor device according to claim 4,

wherein the secondary battery is at least one of a lithium polymer battery using gel electrolyte, a lithium ion battery, a nickel metal hydride battery, a nickel cadmium battery, an organic radical battery, a lead-acid battery, an air secondary battery, a nickel-zinc battery and a silver-zinc battery.

16. The semiconductor device according to claim 4,

wherein a switching element is disposed between the secondary battery and the booster circuit.