AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR

• US 20100276685A1
• Filed: 12/25/2008
• Published: 11/04/2010
• Est. Priority Date: 01/08/2008
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Iwasaki, Tatsuya, Itagaki, Naho, Goyal, Amita
• Granted Patent: US 8,212,248 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.

Claims

1. An amorphous oxide, at least comprising:

at least one element selected from the group consisting of In, Zn, and Sn; and

Mo,

wherein an atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.

2. An amorphous oxide according to claim 1, wherein the atomic composition ratio of Mo to the number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 3 atom % or lower.

3. An amorphous oxide according to claim 1, further comprising In and Zn.

4. An amorphous oxide according to claim 3, wherein an atomic composition ratio of In to a sum of In and Zn, In/(In +Zn), in the amorphous oxide is 30 atom % or higher and 80 atom % or lower.

5. An amorphous oxide according to claim 3, wherein an atomic composition ratio of Zn to the number of all metallic atoms in the amorphous oxide is 70 atom % or lower.

6. An amorphous oxide according to claim 1, further comprising Ga.

7. An amorphous oxide according to claim 1, wherein the amorphous oxide is incorporated in a field effect transistor that includes:

a drain electrode;

a source electrode;

a gate electrode;

an active layer; and

a gate insulating film,

wherein the amorphous oxide is included in the active layer.

8. An amorphous oxide according to claim 7, wherein the source electrode and the drain electrode contain Mo.

9. An amorphous oxide according to claim 7, wherein the field effect transistor is incorporated in a display apparatus that includes an electrode, and wherein one of the source electrode and the drain electrode of the field effect transistor is connected to the electrode of the display device.

10. An amorphous oxide according to claim 9, wherein the display device includes an electroluminescence device.

11. An amorphous oxide according to claim 9, wherein the display device includes a liquid crystal cell.

12. An amorphous oxide according to claim 9, wherein the display device is part of a plurality of display devices and the field effect transistor is part of a plurality of field effect transistors, and the plurality of display devices and the plurality of field effect transistors are two-dimensionally arranged on a substrate.