Processes and structures for IC fabrication

• US 20100314734A1
• Filed: 06/14/2009
• Published: 12/16/2010
• Est. Priority Date: 06/14/2009
• Status: Active Grant

• Current Assignee: Terecircuits Corporation
• Original Assignee: Terepac Corporation
• Inventors: Sheats, Jayna
• Granted Patent: US 8,759,713 B2
• Time in Patent Office: Days
• US Class Current: 257/685
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45014 Ribbon connectors, e.g. rectangular cross-section
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/45111 Tin (Sn) as principal constituent
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45139 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/48699 Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
• CPC Class Codes: H01L 2224/48799 Principal constituent of the connecting portion of the wire connector being Copper (Cu)
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/78 Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 2224/78301 Capillary
• CPC Class Codes: H01L 2224/85001 involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2224/85205 Ultrasonic bonding
• CPC Class Codes: H01L 2224/85214 using a laser
• CPC Class Codes: H01L 2224/85399 : Material
• CPC Class Codes: H01L 2225/06506 : Wire or wire-like electrical connections between devices
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06524 : Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
• CPC Class Codes: H01L 2225/06579 : TAB carriers; beam leads
• CPC Class Codes: H01L 23/5389 : the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/46 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/78 : Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 29/0657 : characterised by the shape of the body
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10157 : at the active surface
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/206 : Length ranges
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: Y10T 29/49147 : Assembling terminal to base

Abstract

The present invention discloses methods and apparatuses for the separations of IC fabrication and assembling of separated IC components to form complete IC structures. In an embodiment, the present fabrication separation of an IC structure into multiple discrete components can take advantages of dedicated IC fabrication facilities and achieve more cost effective products. In another embodiment, the present chip assembling provides high density interconnect wires between bond pads, enabling cost-effective assembling of small chip components. In an aspect, the present process bonds multiple interconnect wires to bond pads with electrical linkages between the bond pads and then subsequently separates the adjacent bond pads.

Claims

1. A method for interconnecting bond pads between integrated components, the method comprising:

placing multiple interconnect wires on corresponding bond pads of a integrated component;

bonding the multiple interconnect wires to the bond pads, the bonding process providing electrical linkage between adjacent bond pads; and

electrically separating the adjacent bond pads.

2. A method as in claim 1 further comprising

positioning the integrated component in the vicinity of another integrated component an at least partially stacked configuration.

3. A method as in claim 1 further comprising

positioning the integrated component in the vicinity of another integrated component an at least partially coplanar configuration.

4. A method as in claim 1 further comprising

forming a beveled slope of the integrated component.

5. A method as in claim 1 wherein placing the multiple interconnect wires comprises printing the multiple interconnect wires.

6. A method as in claim 1 wherein placing the multiple interconnect wires comprises simultaneously printing the multiple interconnect wires.

7. A method as in claim 1 wherein bonding the multiple interconnect wires to the bond pads comprises one of laser welding and applying a conductive adhesive.

8. A method as in claim 1 wherein electrically separating the adjacent bond pads comprises laser ablating between the adjacent bond pads.

9. A method for interconnecting bond pads between integrated components, the method comprising:

applying a conductive adhesive line along multiple bond pads of an integrated component;

placing multiple interconnect wires on the conductive adhesive line corresponding to the bond pads;

bonding the multiple interconnect wires to the bond pads; and

laser ablating between the adjacent bond pads.

10. A method as in claim 9 wherein applying a conductive adhesive line comprises printing a conductive adhesive line.

11. A method as in claim 9 further comprising

curing the conductive adhesive line.

12. A method as in claim 9 further comprising

pushing the interconnect wires onto the bond pads.

13. A method as in claim 9 further comprising

forming a beveled slope of the integrated component.

14. A method as in claim 9 wherein placing the multiple interconnect wires comprises printing the multiple interconnect wires.

15. A method as in claim 9 wherein placing the multiple interconnect wires comprises simultaneously printing the multiple interconnect wires.

16. A method as in claim 9 further comprising

positioning the integrated component in the vicinity of another integrated component an at least partially stacked configuration.

17. A method as in claim 9 further comprising

positioning the integrated component in the vicinity of another integrated component an at least partially coplanar configuration.

18. A method as in claim 17 further comprising

applying a conductive adhesive line along the bond pads of the another integrated component;

19. A method as in claim 17 further comprising

bonding the multiple interconnect wires to the bond pads of the another component.

20. A method as in claim 17 further comprising

laser ablating between the adjacent bond pads of the another component.

21. A method for interconnecting bond pads between integrated components, the method comprising:

placing multiple interconnect wires on corresponding bond pads;

laser welding the multiple interconnect wires to the bond pads; and

laser ablating between the adjacent bond pads.

22. A method as in claim 21 wherein laser welding comprises laser ablating along the adjacent bond pads.

23. A method as in claim 21 wherein a same laser is used for welding and ablating.

24. A method as in claim 21 further comprising

pushing the interconnect wires onto the bond pads.

25. A method as in claim 21 further comprising

forming a beveled slope of the integrated component.

26. A method as in claim 21 wherein placing the multiple interconnect wires comprises printing the multiple interconnect wires.

27. A method as in claim 21 wherein placing the multiple interconnect wires comprises simultaneously printing the multiple interconnect wires.

28. A method as in claim 21 further comprising

positioning the integrated component in the vicinity of another integrated component in at least partially stacked configuration.

29. An integrated component comprising

a plurality of bond pads for connecting the functional devices within the integrated component;

a plurality of interconnect wires bonded to the corresponding bond pads;

one or more laser ablation cuts between the adjacent bond pads to electrically separate the adjacent bond pads after interconnect wire bonding.

30. An integrated component as in claim 29 further comprising a beveled slope edge.

31. An integrated component as in claim 29 wherein the interconnect wires are bonded to the corresponding bond pads by laser welding.

32. An integrated component as in claim 29 wherein the interconnect wires are bonded to the corresponding bond pads by a conductive adhesion line.

33. An chip assembly comprising an integrated component as in claim 29, comprising

a second integrated component located in the vicinity of the integrated component, the bottom integrated component comprising a plurality of second bond pads bonded to the interconnect wires.

34. A chip assembly comprising an integrated component as in claim 29, wherein the integrated components are positioned in an at least partially stacked configuration.

35. A chip assembly comprising an integrated component as in claim 29, wherein the integrated components are positioned in an at least partially coplanar configuration.

36. A chip assembly comprising an integrated component as in claim 29, further comprising

one or more laser ablation cuts between the adjacent bond pads of the second integrated component.