IGZO-BASED OXIDE MATERIAL AND METHOD OF PRODUCING IGZO-BASED OXIDE MATERIAL

• US 20100320458A1
• Filed: 06/15/2010
• Published: 12/23/2010
• Est. Priority Date: 06/22/2009
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Umeda, Kenichi, Tanaka, Atsushi, Suzuki, Masayuki
• Granted Patent: US 8,334,532 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: C01G 15/006 Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
• CPC Class Codes: C01P 2002/34 perovskite-type (ABO3)
• CPC Class Codes: C01P 2002/52 containing elements as dopants
• CPC Class Codes: C01P 2002/72 by d-values or two theta-values, e.g. as X-ray diagram
• CPC Class Codes: C01P 2006/32 Thermal properties
• CPC Class Codes: C01P 2006/40 Electric properties
• CPC Class Codes: C30B 29/22 Complex oxides
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The invention provides an IGZO-based oxide material and a method of producing the same, the IGZO-based oxide material being represented by a composition formula of In_2-xGa_xZnO_4-δ, where 0.75<x<1.10 and 0<δ≦1.29161×exp(−x/0.11802)+0.00153, and being formed from a single phase of IGZO having a crystal structure of YbFe₂O₄.

Claims

1. An IGZO-based oxide material represented by a composition formula of In_2-xGa_xZnO_4-δ

, where 0.75<

x<

1.10 and 0<

δ

≦

1.29161×

exp(−

x/0.11802)+0.00153, and formed from a single phase of IGZO having a crystal structure of YbFe₂O₄.

2. The IGZO-based oxide material according to claim 1, wherein the IGZO-based oxide material has a value of resistivity of from 1×

10² Ω

·

cm to 1×

10⁹ Ω

·

cm.

3. The IGZO-based oxide material according to claim 1, wherein the IGZO-based oxide material is a semiconductor.

4. The IGZO-based oxide material according to claim 1, wherein x in the composition formula satisfies 0.80≦

x≦

1.05.

5. The IGZO-based oxide material according to claim 4, wherein x in the composition formula satisfies 0.80≦

x≦

1.00.

6. The IGZO-based oxide material according to claim 1, wherein the IGZO-based oxide material has a carrier concentration of from more than 10¹³ cm⁻

3 to less than 10¹⁷ cm<sup>−

3</sup>.

7. A method of producing the IGZO-based oxide material according to claim 1, the method comprising annealing, in an oxygen-containing atmosphere, a mixed material including In, Ga and Zn, under conditions of a maximum annealing temperature of from 1200°

C. to 1400°

C. and an average rate of temperature decrease from the maximum annealing temperature to 300°

C. of from 50°

C./hr to 500°

C./hr.

8. The method of producing the IGZO-based oxide material according to claim 6, wherein the average rate of temperature decrease is from 100°

C./hr to 200°

C./hr.

9. The method of producing the IGZO-based oxide material according to claim 6, wherein the maximum annealing temperature is from 1350°

C. to 1400°

C.

10. A method of producing the IGZO-based oxide material according to claim 1, the method comprising:

producing an IGZO-based oxide represented by a composition formula of In_2-xGa_xZnO_4-δ

, where 0.75<

x<

1.10 and δ

>

0, and formed from a single phase of IGZO having a crystal structure of YbFe₂O₄; and

controlling the range of 6 in the composition formula of the IGZO-based oxide to 0<

δ

≦

1.29161×

exp(−

x/0.11802)+0.00153 by subjecting the IGZO-based oxide to post-annealing in an oxidizing atmosphere that contains oxygen.