THIN FILM TRANSISTOR AND METHOD OF PRODUCING THIN FILM TRANSISTOR
First Claim
Patent Images
1. A thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of In2-xGaxZnO4-δ
- , where 0.75<
x<
1.10 and 0<
δ
≦
1.29161×
exp(−
x/0.11802)+0.00153 and being formed from a single phase of IGZO having a crystal structure of YbFe2O4.
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Abstract
The invention provides a thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of In2-xGaxZnO4-δ, where 0.75<x<1.10 and 0<δ≦1.29161×exp(−x/0.11802)+0.00153 and being formed from a single phase of IGZO having a crystal structure of YbFe2O4, and a method of producing the thin film transistor.
432 Citations
10 Claims
-
1. A thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of In2-xGaxZnO4-δ
- , where 0.75<
x<
1.10 and 0<
δ
≦
1.29161×
exp(−
x/0.11802)+0.00153 and being formed from a single phase of IGZO having a crystal structure of YbFe2O4. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
- , where 0.75<
Specification