SYSTEMS AND METHODS FOR INTEGRATED CIRCUITS COMPRISING MULTIPLE BODY BIASING DOMAINS

• US 20100321098A1
• Filed: 08/31/2010
• Published: 12/23/2010
• Est. Priority Date: 02/02/2004
• Status: Active Grant

• Current Assignee: Meta Platforms, Inc. (f/k/a Facebook, Inc.)
• Original Assignee: Intellectual Ventures Funding LLC (Intellectual Ventures LLC)
• Inventors: Koniaris, Kleanthes G., Burr, James B., Masleid, Robert Paul
• Granted Patent: US 8,420,472 B2
• Time in Patent Office: Days
• US Class Current: 327/534
• CPC Class Codes: H01L 21/743 Making of internal connections, substrate contacts
• CPC Class Codes: H01L 21/761 PN junctions
• CPC Class Codes: H01L 21/823878 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 21/823892 with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence

Abstract

Systems and methods for integrated circuits comprising multiple body biasing domains. In accordance with a first embodiment of the present invention, a semiconductor structure comprises a substrate of first type material. A first closed structure comprising walls of second type material extends from a surface of the substrate to a first depth. A planar deep well of said second type material underlying and coupled to the closed structure extends from the first depth to a second depth. The closed structure and the planar deep well of said second type material form an electrically isolated region of the first type material. A second-type semiconductor device is disposed to receive a first body biasing voltage from the electrically isolated region of the first type material. A well of the second-type material within the electrically isolated region of the first type material is formed and a first-type semiconductor device is disposed to receive a second body biasing voltage from the well of second-type material.

Claims

1. A method of operating an integrated circuit comprising:

applying a first pair of body biasing voltages to circuitry of a first body biasing domain;

applying a second pair of body biasing voltages to circuitry of a second body biasing domain; and

responsive to said applying a second pair of body biasing voltages, performing a function characteristic of said integrated circuit, said function utilizing said circuitry of a second body biasing domain as biased by the second pair of body biasing voltages.

2. The method of claim 1 wherein said applying said first pair of body biasing voltages increases a maximum frequency of operation for said circuitry of said first body biasing domain compared to nominal and wherein said applying said second pair of body biasing voltages results in a decreased maximum frequency of operation for said circuitry of said second body biasing domain compared to nominal.

3. The method of claim 1 wherein said applying said first pair of body biasing voltages decreases leakage current of said circuitry of said first body biasing domain compared to nominal.

4. The method of claim 3 wherein said applying of said first pair of body biasing voltages renders said circuitry of said first body biasing domain unable to perform a desired function.

5. The method of claim 4 wherein said circuitry of said first body biasing domain performs a desired prescribed function.

6. A method according to claim 1 wherein said circuitry of said first body biasing domain does not produce a desired prescribed function without application of said first pair of body biasing voltages.

7. A method of operating an integrated circuit comprising:

applying a first pair of body biasing voltages to circuitry of a first body biasing domain;

applying a second pair of body biasing voltages to circuitry of a second body biasing domain; and

responsive to said applying a second pair of body biasing voltages, performing a function characteristic of said integrated circuit, said function utilizing said circuitry of said first body biasing domain and said circuitry of said second body biasing domain.

8. The method of claim 7 wherein said applying said first pair of body biasing voltages increases a maximum frequency of operation for said circuitry of said first body biasing domain compared to nominal and wherein said applying said second pair of body biasing voltages results in a decreased maximum frequency of operation for said circuitry of said second body biasing domain compared to nominal.

9. The method of claim 7 wherein said applying said first pair of body biasing voltages decreases leakage current of said circuitry of said first body biasing domain compared to nominal.

10. The method of claim 9 wherein said applying of said first pair of body biasing voltages renders said circuitry of said first body biasing domain unable to perform a desired function.

11. The method of claim 10 wherein said circuitry of said first body biasing domain performs a desired prescribed function.

12. The method of claim 7 wherein said circuitry of said first body biasing domain does not produce a desired prescribed function without application of said first pair of body biasing voltages.

13. The method of claim 7 wherein said performing a function comprises transferring a signal between said circuitry of said first body biasing domain and said circuitry of said second body biasing domain.

14. An article of manufacture including a computer readable medium having instructions stored thereon that, responsive to execution by a computing device, cause said computing device to perform operations comprising:

applying a first pair of body biasing voltages to circuitry of a first body biasing domain of an integrated circuit;

applying a second pair of body biasing voltages to circuitry of a second body biasing domain of said integrated circuit; and

responsive to said applying a second pair of body biasing voltages, performing a function characteristic of said integrated circuit, said function utilizing said circuitry of a second body biasing domain as biased by the second pair of body biasing voltages.

15. The article of manufacture of claim 14 wherein said applying said first pair of body biasing voltages increases a maximum frequency of operation for said circuitry of said first body biasing domain compared to nominal and wherein said applying said second pair of body biasing voltages results in a decreased maximum frequency of operation for said circuitry of said second body biasing domain compared to nominal.

16. The article of manufacture of claim 14 wherein said applying said first pair of body biasing voltages decreases leakage current of said circuitry of said first body biasing domain compared to nominal.

17. The article of manufacture of claim 16 wherein said applying of said first pair of body biasing voltages renders said circuitry of said first body biasing domain unable to perform a desired function.

18. The article of manufacture of claim 17 wherein said circuitry of said first body biasing domain performs a desired prescribed function.

19. The article of manufacture of claim 14 wherein said circuitry of said first body biasing domain does not produce a desired prescribed function without application of said first pair of body biasing voltages.

20. The article of manufacture of claim 15 wherein said performing a function comprises transferring a signal between said circuitry of said first body biasing domain and said circuitry of said second body biasing domain.