GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

• US 20100327228A1
• Filed: 01/28/2009
• Published: 12/30/2010
• Est. Priority Date: 02/08/2008
• Status: Active Grant

• Current Assignee: Showa Denko KK
• Original Assignee: Showa Denko KK
• Inventors: Amano, Hiroshi, Bando, Akira
• Granted Patent: US 8,541,292 B2
• Time in Patent Office: Days
• US Class Current: 252/301.4R
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02642 Mask materials other than SiO2 or SiN
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 31/03048 comprising a nitride compounds, e.g. InGaN
• CPC Class Codes: H01L 31/1844 comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01S 2304/12 Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

There is provided a group III nitride semiconductor epitaxial substrate which has a suppressed level of threading dislocation in the vertical direction and excellent crystal quality, the group III nitride semiconductor epitaxial substrate including a substrate (1) for growing an epitaxial film; and an ELO layer (4) having a composition of Al_xGa_1-xN (0≦x≦1) formed either on top of the substrate (1) or on top of a group III nitride layer (2) formed on top of the substrate (1), wherein the ELO layer (4) is a layer formed by using a mask pattern (3), which is composed of carbon and is formed either on top of the substrate (1) or on top of the group III nitride layer (2).

Claims

1. A group III nitride semiconductor epitaxial substrate comprising:

a substrate for growing an epitaxial film; and

an ELO layer having a composition of Al_xGa_1-xN (0≦

x≦

1) formed either on top of the substrate or on top of a group III nitride layer formed on top of the substrate,

wherein the ELO layer is a layer formed by using a mask pattern, which is composed of carbon and is formed either on top of the substrate or on top of the group III nitride layer.

3. The group III nitride semiconductor epitaxial substrate according to claim 1,

wherein the mask pattern is present between the substrate or the group III nitride layer and the ELO layer.

4. The group III nitride semiconductor epitaxial substrate according to claim 1,

wherein the mask pattern is absent between the substrate or the group III nitride layer and the ELO layer.

2. A group III nitride semiconductor epitaxial substrate comprising:

a substrate for growing an epitaxial film; and

an ELO layer having a composition of Al_xGa_1-xN (0<

x≦

1) formed either on top of the substrate or on top of a group III nitride layer formed on top of the substrate,

wherein the ELO layer is a layer formed by using a mask pattern, which is composed of carbon and is formed either on top of the substrate or on top of the group III nitride layer.

5. A method for manufacturing a group III nitride semiconductor epitaxial substrate comprising:

a step for forming a mask pattern composed of carbon on top of a substrate for growing an epitaxial film or on top of a group III nitride layer formed on top of the substrate; and

a step for forming an ELO layer having a composition of Al_xGa_1-xN (0≦

x≦

1) by using the mask pattern.

6. A method for manufacturing a group III nitride semiconductor epitaxial substrate comprising:

a step for forming a mask pattern composed of carbon on top of a substrate for growing an epitaxial film or on top of a group III nitride layer formed on top of the substrate; and

a step for forming an ELO layer having a composition of Al_xGa_1-xN (0≦

x≦

1) by using the mask pattern.