METHODS FOR ETCHING DOPED OXIDES IN THE MANUFACTURE OF MICROFEATURE DEVICES
First Claim
1. A method for etching material on a microfeature workpiece, the method comprising:
- providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer; and
selectively etching the doped oxide layer with an etchant including DI;
HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250;
1, and (b) an etch rate through PSG of greater than 9,000 Å
/minute.
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Abstract
Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece includes providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer. The method include selectively etching the doped oxide layer with an etchant comprising DI:HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250:1, and (b) an etch rate through PSG of greater than 9,000 Å/minute.
32 Citations
20 Claims
-
1. A method for etching material on a microfeature workpiece, the method comprising:
-
providing a microfeature workpiece including a doped oxide layer and a nitride layer adjacent to the doped oxide layer; and selectively etching the doped oxide layer with an etchant including DI;
HF and an acid to provide a pH of the etchant such that the etchant includes (a) a selectivity of phosphosilicate glass (PSG) to nitride of greater than 250;
1, and (b) an etch rate through PSG of greater than 9,000 Å
/minute. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification